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Date Time
Place
Paper Title / Authors
Abstract
Paper #
SDM
,
EID
2016-12-12
10:00
Nara
NAIST
Analysis of the cause of high performance IGZO thin film transistor using SrTa2O6 as gate insulator
Kento Oikawa
,
Mami N. Fujii
,
Juan Paolo Bermundo
(
NAIST
),
Kiyoshi Uchiyama
(
Tsuruoka College
),
Yasuaki Ishikawa
,
Yukiharu Uraoka
(
NAIST
)
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