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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2020-11-19
13:10		 Online Online [Invited Talk] Toward unification of large-scale first-principles calculations and device/process simulators
Atsushi Oshiyama (Nagoya Univ.) SDM2020-24		 I report our first-principles calculations which clarify elementary processes in the epitaxial growth of GaN. We find th... [more] SDM2020-24
pp.11-14
SDM 2017-11-10
13:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Quantum Transport Simulation of Ultra-Small Transistors
Nobuya Mori, Gennady Mil'nikov (Osaka Univ), Junichi Iwata, Atsushi Oshiyama (Univ of Tokyo) SDM2017-69		 We have developed a quantum transport simulator for ultra-small transistors. The simulator is based on a nonequilibrium... [more] SDM2017-69
pp.43-46
ED, LQE, CPM 2009-11-19
14:20		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations
Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST) ED2009-138 CPM2009-112 LQE2009-117		 In-containing nitride semiconductors exhibit characteristic behavior which can be ascribed to the large difference in th... [more] ED2009-138 CPM2009-112 LQE2009-117
pp.47-50
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