Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM |
2017-02-24 10:00 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
Fabrication and evaluation of silicon triple quantum dots with a compact device structure Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (IST. Hokkaido Univ.), Akira Fujiwara (NTT BRL), Yasuo Takahashi (IST. Hokkaido Univ.) ED2016-130 SDM2016-147 |
Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information pr... [more] |
ED2016-130 SDM2016-147 pp.1-6 |
OME |
2016-10-28 14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
DC transport characteristics of Au/pentacene/ Au junctions Toshiaki Hayashi, Akiyoshi Naka, Akira Fujiwara (NTT), Tomoyuki Yokota, Takao Someya (Tokyo Univ.) OME2016-40 |
DC transport measurements were performed on Au / pentacene / Au junction devices. Based on photoconduction, scan-directi... [more] |
OME2016-40 pp.9-12 |
OME |
2016-10-28 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Molecular Nanoarrays: from conductance statistics to high-frequency molecular electronics Jorge Trasobares, Kacem Smaali (CNRS), Akira Fujiwara (NTT), Didier Theron, Dominique Vuillaume (CNRS), Nicolas Clement (NTT) OME2016-42 |
[more] |
OME2016-42 pp.17-20 |
OME |
2015-11-06 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Hopping transport in a Ag/pentacene/Ag junction Toshiaki Hayashi (NTT), Tomoyuki Yokota, Ren Shidachi (Univ. of Tokyo), Akira Fujiwara (NTT), Takao Someya (Univ. of Tokyo) OME2015-62 |
[more] |
OME2015-62 pp.11-14 |
SDM, ED |
2015-02-05 15:05 |
Hokkaido |
Hokkaido Univ. |
Highly functionality of three-terminal nanodot array for multi-input and multi-output devices Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150 |
Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional... [more] |
ED2014-141 SDM2014-150 pp.17-22 |
SDM, ED |
2013-02-28 09:25 |
Hokkaido |
Hokkaido Univ. |
Characteristics of double quantum dot Si single-electron transisor caused by the number change of electrons in quantum dot Takafumi Uchida, Hiroto Takenaka, Isamu Yoshioka, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2012-138 SDM2012-167 |
A double quantum-dot (DQD) device is expected as a key device for quantum information processing as well as a single-ele... [more] |
ED2012-138 SDM2012-167 pp.53-58 |
ED, SDM |
2012-02-07 15:15 |
Hokkaido |
|
High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) ED2011-145 SDM2011-162 |
Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] |
ED2011-145 SDM2011-162 pp.19-24 |
ED, SDM |
2012-02-07 16:55 |
Hokkaido |
|
Light emission from Silicon quantum-well by tunneling current injection Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL) ED2011-149 SDM2011-166 |
We demonstrated electron tunneling spectroscopy of thin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effec... [more] |
ED2011-149 SDM2011-166 pp.41-46 |
ED, SDM |
2012-02-08 11:25 |
Hokkaido |
|
Stochastic resonance using a steep-subthreshold-swing transistor Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ED2011-154 SDM2011-171 |
We demonstrate stochastic resonance (SR) using nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) wi... [more] |
ED2011-154 SDM2011-171 pp.71-76 |
SDM, ED |
2011-02-24 10:45 |
Hokkaido |
Hokkaido Univ. |
Electrical Characteristics of Si Single-Electron Transistor with Single-Carrier Trap Formed by Photo-Irradiation Michito Shinohara, Yuki Kato, Kei Mikami, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2010-203 SDM2010-238 |
It is well known that step-like current jumps are observed when huge vertical electric field are applied to a Si single-... [more] |
ED2010-203 SDM2010-238 pp.63-66 |
SDM, ED |
2011-02-24 11:35 |
Hokkaido |
Hokkaido Univ. |
Stochastic resonance using single electrons Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ED2010-205 SDM2010-240 |
We demonstrate stochastic resonance (SR) with single electrons (SEs) using nanoscale metal-oxide-semiconductor field-eff... [more] |
ED2010-205 SDM2010-240 pp.73-77 |
SDM, ED |
2009-06-26 12:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Fabrication of double-dot single-electron transistor in silicon nanowire Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2009-94 SDM2009-89 |
We propose a simple method for the fabrication of Si single-electron transistors (SET) with coupled dots by means of pat... [more] |
ED2009-94 SDM2009-89 pp.189-192 |
SDM, ED |
2009-02-26 14:10 |
Hokkaido |
Hokkaido Univ. |
Magnetic properties of Mn-implanyed SOI layers Yasuaki Miyazaki (NTT/Keio Univ.), Yukinori Ono, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara (NTT), Eiji Ohta (Keio Univ.) ED2008-225 SDM2008-217 |
[more] |
ED2008-225 SDM2008-217 pp.7-11 |
SDM, ED |
2009-02-27 09:25 |
Hokkaido |
Hokkaido Univ. |
Dual-dot single-electron transistor fabricated in silicon nanowire Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2008-233 SDM2008-225 |
It is well known that a Si single-electron transistor (SET) is automatically fabricated by means of pattern-dependent ox... [more] |
ED2008-233 SDM2008-225 pp.53-58 |
SDM, ED |
2008-07-10 09:00 |
Hokkaido |
Kaderu2・7 |
Single-Electron-Resolution Electrometer Based on Field-Effect Transistor Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi (NTT) ED2008-62 SDM2008-81 |
[more] |
ED2008-62 SDM2008-81 pp.119-124 |
ED, SDM |
2008-01-31 11:40 |
Hokkaido |
|
Half adder operation using 2-output single-electron device composed of a Si nanodot array Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (HShizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2007-250 SDM2007-261 |
[more] |
ED2007-250 SDM2007-261 pp.69-73 |
ED, SDM |
2008-01-31 12:05 |
Hokkaido |
|
Single-electron circuit for stochastic data processing using nano-MOSFETs Katsuhiko Nishiguchi, Akira Fujiwara (NTT BRL) ED2007-251 SDM2007-262 |
A MOSFET-based circuit utilizing single electrons is demonstrated at room temperature. Individual electrons randomly pas... [more] |
ED2007-251 SDM2007-262 pp.75-79 |
ED, SDM |
2007-06-25 13:00 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
[Invited Talk]
Room-temperature-operating single-electron devices using silicon nanowire MOSFET Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) |
In this paper, we report the development of devices for single-electron transfer and detection at room temperature, usin... [more] |
|
SDM, ED |
2007-02-01 16:20 |
Hokkaido |
|
Single-electron device using Si nanodot array and multi-input gates Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) |
[more] |
ED2006-246 SDM2006-234 pp.35-40 |
ED, SDM |
2006-01-26 15:30 |
Hokkaido |
Hokkaido Univ. |
[Invited Talk]
Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature
-- Fabrication using SOI and measurements of its characteristics -- Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa (NTT), Yasuo Takahashi (Hokkaido Univ.) |
A single-electron-based circuit, in which electrons are transferred one-by-one with a turnstile and subsequently detecte... [more] |
ED2005-228 SDM2005-240 pp.23-28 |