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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 22  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2017-02-24
10:00
Hokkaido Centennial Hall, Hokkaido Univ. Fabrication and evaluation of silicon triple quantum dots with a compact device structure
Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (IST. Hokkaido Univ.), Akira Fujiwara (NTT BRL), Yasuo Takahashi (IST. Hokkaido Univ.) ED2016-130 SDM2016-147
Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information pr... [more] ED2016-130 SDM2016-147
pp.1-6
OME 2016-10-28
14:00
Tokyo Kikai-Shinko-Kaikan Bldg. DC transport characteristics of Au/pentacene/ Au junctions
Toshiaki Hayashi, Akiyoshi Naka, Akira Fujiwara (NTT), Tomoyuki Yokota, Takao Someya (Tokyo Univ.) OME2016-40
DC transport measurements were performed on Au / pentacene / Au junction devices. Based on photoconduction, scan-directi... [more] OME2016-40
pp.9-12
OME 2016-10-28
14:40
Tokyo Kikai-Shinko-Kaikan Bldg. Molecular Nanoarrays: from conductance statistics to high-frequency molecular electronics
Jorge Trasobares, Kacem Smaali (CNRS), Akira Fujiwara (NTT), Didier Theron, Dominique Vuillaume (CNRS), Nicolas Clement (NTT) OME2016-42
 [more] OME2016-42
pp.17-20
OME 2015-11-06
14:40
Tokyo Kikai-Shinko-Kaikan Bldg. Hopping transport in a Ag/pentacene/Ag junction
Toshiaki Hayashi (NTT), Tomoyuki Yokota, Ren Shidachi (Univ. of Tokyo), Akira Fujiwara (NTT), Takao Someya (Univ. of Tokyo) OME2015-62
 [more] OME2015-62
pp.11-14
SDM, ED 2015-02-05
15:05
Hokkaido Hokkaido Univ. Highly functionality of three-terminal nanodot array for multi-input and multi-output devices
Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150
Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional... [more] ED2014-141 SDM2014-150
pp.17-22
SDM, ED 2013-02-28
09:25
Hokkaido Hokkaido Univ. Characteristics of double quantum dot Si single-electron transisor caused by the number change of electrons in quantum dot
Takafumi Uchida, Hiroto Takenaka, Isamu Yoshioka, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2012-138 SDM2012-167
A double quantum-dot (DQD) device is expected as a key device for quantum information processing as well as a single-ele... [more] ED2012-138 SDM2012-167
pp.53-58
ED, SDM 2012-02-07
15:15
Hokkaido   High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation
Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) ED2011-145 SDM2011-162
Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] ED2011-145 SDM2011-162
pp.19-24
ED, SDM 2012-02-07
16:55
Hokkaido   Light emission from Silicon quantum-well by tunneling current injection
Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL) ED2011-149 SDM2011-166
We demonstrated electron tunneling spectroscopy of thin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effec... [more] ED2011-149 SDM2011-166
pp.41-46
ED, SDM 2012-02-08
11:25
Hokkaido   Stochastic resonance using a steep-subthreshold-swing transistor
Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ED2011-154 SDM2011-171
We demonstrate stochastic resonance (SR) using nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) wi... [more] ED2011-154 SDM2011-171
pp.71-76
SDM, ED 2011-02-24
10:45
Hokkaido Hokkaido Univ. Electrical Characteristics of Si Single-Electron Transistor with Single-Carrier Trap Formed by Photo-Irradiation
Michito Shinohara, Yuki Kato, Kei Mikami, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2010-203 SDM2010-238
It is well known that step-like current jumps are observed when huge vertical electric field are applied to a Si single-... [more] ED2010-203 SDM2010-238
pp.63-66
SDM, ED 2011-02-24
11:35
Hokkaido Hokkaido Univ. Stochastic resonance using single electrons
Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ED2010-205 SDM2010-240
We demonstrate stochastic resonance (SR) with single electrons (SEs) using nanoscale metal-oxide-semiconductor field-eff... [more] ED2010-205 SDM2010-240
pp.73-77
SDM, ED 2009-06-26
12:00
Overseas Haeundae Grand Hotel, Busan, Korea Fabrication of double-dot single-electron transistor in silicon nanowire
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2009-94 SDM2009-89
We propose a simple method for the fabrication of Si single-electron transistors (SET) with coupled dots by means of pat... [more] ED2009-94 SDM2009-89
pp.189-192
SDM, ED 2009-02-26
14:10
Hokkaido Hokkaido Univ. Magnetic properties of Mn-implanyed SOI layers
Yasuaki Miyazaki (NTT/Keio Univ.), Yukinori Ono, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara (NTT), Eiji Ohta (Keio Univ.) ED2008-225 SDM2008-217
 [more] ED2008-225 SDM2008-217
pp.7-11
SDM, ED 2009-02-27
09:25
Hokkaido Hokkaido Univ. Dual-dot single-electron transistor fabricated in silicon nanowire
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2008-233 SDM2008-225
It is well known that a Si single-electron transistor (SET) is automatically fabricated by means of pattern-dependent ox... [more] ED2008-233 SDM2008-225
pp.53-58
SDM, ED 2008-07-10
09:00
Hokkaido Kaderu2・7 Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi (NTT) ED2008-62 SDM2008-81
 [more] ED2008-62 SDM2008-81
pp.119-124
ED, SDM 2008-01-31
11:40
Hokkaido   Half adder operation using 2-output single-electron device composed of a Si nanodot array
Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (HShizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2007-250 SDM2007-261
 [more] ED2007-250 SDM2007-261
pp.69-73
ED, SDM 2008-01-31
12:05
Hokkaido   Single-electron circuit for stochastic data processing using nano-MOSFETs
Katsuhiko Nishiguchi, Akira Fujiwara (NTT BRL) ED2007-251 SDM2007-262
A MOSFET-based circuit utilizing single electrons is demonstrated at room temperature. Individual electrons randomly pas... [more] ED2007-251 SDM2007-262
pp.75-79
ED, SDM 2007-06-25
13:00
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea [Invited Talk] Room-temperature-operating single-electron devices using silicon nanowire MOSFET
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.)
In this paper, we report the development of devices for single-electron transfer and detection at room temperature, usin... [more]
SDM, ED 2007-02-01
16:20
Hokkaido   Single-electron device using Si nanodot array and multi-input gates
Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.)
 [more] ED2006-246 SDM2006-234
pp.35-40
ED, SDM 2006-01-26
15:30
Hokkaido Hokkaido Univ. [Invited Talk] Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature -- Fabrication using SOI and measurements of its characteristics --
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa (NTT), Yasuo Takahashi (Hokkaido Univ.)
A single-electron-based circuit, in which electrons are transferred one-by-one with a turnstile and subsequently detecte... [more] ED2005-228 SDM2005-240
pp.23-28
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