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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2008-12-19 15:05 |
Miyagi |
Tohoku Univ. |
Ultrahigh-Speed Operations of InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions Akira Endoh, Issei Watanabe (NICT), Keisuke Shinohara (NICT/HRL Labs.), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2008-187 |
DC and RF characteristics at 300 and 16 K of In0.52Al0.48As/In0.7Ga0.3As HEMTs were measured in the gate length Lg range... [more] |
ED2008-187 pp.15-20 |
ED |
2008-12-19 16:20 |
Miyagi |
Tohoku Univ. |
[Invited Talk]
Wireless system technologies and millimeter-wave device research Toshiaki Matsui, Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Norio Onojima, Masataka Higashiwaki, Nobumitsu Hirose (NICT) ED2008-190 |
Millimeter-wave research and developments are now state necessity for expansion of radio spectrum resource. Recent wides... [more] |
ED2008-190 pp.33-34 |
ED |
2007-11-27 13:55 |
Miyagi |
Tohoku Univ. Research Institute of Electrical Communication |
Fabrication of ultrafast InP-based HEMTs for MMIC application Issei Watanabe, Akira Endoh (NICT), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2007-188 |
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] |
ED2007-188 pp.7-10 |
ED |
2007-11-27 14:45 |
Miyagi |
Tohoku Univ. Research Institute of Electrical Communication |
Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe (NICT), Yoshimi Yamashita (Fujitsu Lab.), Takashi Mimura, Toshiaki Matsui (NICT) ED2007-190 |
We fabricated sub-100-nm-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) t... [more] |
ED2007-190 pp.17-21 |
ED, SDM, R |
2006-11-24 15:15 |
Osaka |
Central Electric Club |
Effects of heterointerface flatness on device performance of InP-based HEMT
-- Reduction of interface roughness scattering using (411)A-oriented substrate -- Issei Watanabe (NICT), Keisuke Shinohara (Rockwell), Takahiro Kitada (Univ.of Tokushima), Satoshi Shimomura (Ehimeiv.), Akira Endoh, Yoshimi Yamashita, Takashi Mimura (Fujitsu Labs.), Satoshi Hiyamizu (Osaka Univ./Nara National College of Tech.), Toshiaki Matsui (NICT) |
[more] |
R2006-35 ED2006-180 SDM2006-198 pp.21-25 |
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