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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2014-08-05
13:05		 Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] Oxide Semiconductor-based Transistors Formed in LSI Interconnects
Hiroshi Sunamura, Naoya Furutake, Shinobu Saito, Mitsuru Narihiro, Yoshihiro Hayashi (REL) SDM2014-76 ICD2014-45		 We report on the latest progress on our proposed new transistor technology called BEOL-FET, in which we form oxide-based... [more] SDM2014-76 ICD2014-45
pp.77-82
SDM 2012-03-05
11:20		 Tokyo Kikai-Shinko-Kaikan Bldg. Highly Reliable BEOL-Transistor with oxygen-controlled InGaZnO channel and Gate/Drain Offset design
Kishou Kaneko, Naoya Inoue, Shinobu Saito, Naoya Furutake, Hiroshi Sunamura, Jun Kawahara, Masami Hane, Yoshihiro Hayashi (Renesas Electronics) SDM2011-178		 Reliability of BEOL-transistors with a wide-gap oxide semiconductor InGaZnO film for high-voltage interface, integrated ... [more] SDM2011-178
pp.13-17
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