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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2008-11-28
13:30		 Aichi Nagoya Institute of Technology Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer
Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC) ED2008-177 CPM2008-126 LQE2008-121		 We have fabricated AlGaN/GaN HEMTs with a thin p-InGaN cap layer and measured I-V characteristics of the devices. For th... [more] ED2008-177 CPM2008-126 LQE2008-121
pp.125-130
LQE, ED, CPM 2005-10-13
09:30		 Shiga Ritsumeikan Univ. High-quality InN grown on micro-facetted InN template
Daisuke Muto, Hiroyuki Naoi, Tsutomu Araki, Sachio Kitagawa, Masahito Kurouchi, Hyunseok Na, Yasushi Nanishi (Ritsumeikan Univ.) 		 [more] ED2005-118 CPM2005-105 LQE2005-45
pp.1-4
LQE, ED, CPM 2005-10-13
11:20		 Shiga Ritsumeikan Univ. Characterization of InN/InGaN quantum well structures grown by RF-MBE
Masahito Kurouchi, Sinya Takado, Hiroyuki Naoi, Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) 		 [more] ED2005-123 CPM2005-110 LQE2005-50
pp.23-28
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