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 Results 41 - 44 of 44 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
AP, ITE-BCT 2012-02-10
14:55		 Hiroshima NHK Hiroshima Estimation and measurement of Cylindrical wave propagation in Honeycomb for the use in mm-wave RLSA
Rushanthi Sachithra Jayawardene, Tung Xuan Nguyen, Yasutomo Takano, Kimio Sakurai, Takuichi Hirano, Jiro Hirokawa, Makoto Ando (Tokyo Inst. of Tech.), Osamu Amano, Takaomi Matsuzaki, Shuichi Koreeda (NEC Toshiba Space Systems) AP2011-196		 RLSA (Radial Line Slot Antenna) is a planar multimode waveguide slotted array originally designed for DBS reception. The... [more] AP2011-196
pp.111-116
CPM, SDM, ED 2011-05-19
16:05		 Aichi Nagoya Univ. (VBL) Antiphase domains in GaP grown on Si substrates using metalorganic vapor phase epitaxy
Yasushi Takano, Tatsuya Takagi, Tatsuru Misaki, Ryo Miyahara (Shizuoka Univ.) ED2011-15 CPM2011-22 SDM2011-28		 GaP layers were grown on 2° and 4° misoriented Si substrates using metalorganic vapor phase epitaxy. The misoriented sub... [more] ED2011-15 CPM2011-22 SDM2011-28
pp.71-75
SDM, CPM, ED 2010-05-14
13:55		 Shizuoka Shizuoka University (Hamamatsu Campus) Surface morphology at initial growth stage of GaP grown on Si substrates using metalorganic vapor phase epitaxy
Yasushi Takano, Hiroki Yamada, Ryu Misaki, Tatsuya Takagi, Shunro Fuke (Shizuoka Univ.) ED2010-31 CPM2010-21 SDM2010-31		 GaP layers were grown on 4° misoriented Si substrates at 700－830°C using metalorganic vapor phase epitaxy. The surface a... [more] ED2010-31 CPM2010-21 SDM2010-31
pp.75-79
ED, CPM, SDM 2009-05-15
10:30		 Aichi Satellite Office, Toyohashi Univ. of Technology Growth of GaP on Si Substrates at High Temperature by MOVPE
Tatsuya Takagi, Takuya Okamoto, Shunro Fuke, Yasushi Takano (Shizuoka Univ.) ED2009-29 CPM2009-19 SDM2009-19		 GaP was grown on misoriented Si substrates using metalorganic vapor phase epitaxy (MOVPE). At 700 and 800℃,no mirror suf... [more] ED2009-29 CPM2009-19 SDM2009-19
pp.59-64
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