| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EMT, IEE-EMT | 2023-11-10 10:45 |
Yamaguchi | Kaikyo Messe Shimonoseki | Demonstration for Linear-Circular Polarization Converter Fabricated by 3D Printer in 300 GHz Band Shonosuke Hirokawa, Kiyoto Asakawa (TMCIT), hijiri shimokawadoko, Michihiko Suhara (TMU)  EMT2023-73 |
In recently, the terahertz band (frequencies above 300 GHz), which is currently not in commercial use, is expected to be... [more] | EMT2023-73 pp.58-63 |
| ED, MWPTHz | 2022-12-19 14:45 |
Miyagi | [Invited Talk]
Monolithic integrated 300GHz band rectennas with GaAsSb/InGaAs backward diodes Michihiko Suhara, Katsuhiro Usui (TMU), Kiyoto Asakwa (TMCI), Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto (Fujitsu) ED2022-74 MWPTHz2022-45 |
We present a 300-GHz zero-bias detection rectenna using GaAsSb-InGaAs backward diodes (BWDs). The rectenna consists of a... [more] | ED2022-74 MWPTHz2022-45 pp.15-18 |
|
| ED, MWPTHz | 2022-12-19 15:25 |
Miyagi | Admittance spectroscopy of triple-barrier resonant tunneling diodes for extraction of quantum transport parameters. Takeshi Makino, Michihiko Suhara (TMU), Kiyoto Asakawa (TMCIT), Issei Watanabe, Koichi Akahane (NICT) ED2022-75 MWPTHz2022-46 |
Triple-barrier resonant tunneling diodes (TBRTDs) consisting of InGaAs/InAs/InAlAs heterostructures fabricated by low-te... [more] | ED2022-75 MWPTHz2022-46 pp.19-22 |
|
| ED, THz | 2021-12-20 14:20 |
Miyagi | (Primary: On-site, Secondary: Online) |
Fabrication, evaluation and modeling of 300GHz band rectennas integrated with bow-tie antennas and backward diodes Takumi Kimura, Michihiko Suhara, Kastuhiro Usui, Junki Wakayama (TMU), Kiyoto Asakawa (TMCIT), Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto (Fujitsu lab) ED2021-50 |
[more] | ED2021-50 pp.10-15 |
| ED | 2019-08-06 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Modeling of a devices under test for characterization and analysis of compound semiconductor tunnel diodes Michihiko Suhara (TMU) ED2019-30 |
Aiming at the characteristic analysis of compound semiconductor tunnel diode, we considered for modeling and evaluation ... [more] | ED2019-30 pp.17-19 |
| ED, THz | 2018-12-18 09:40 |
Miyagi | RIEC, Tohoku Univ. | A structural design and a dynamic analysis for a bow-tie antenna-integrated resonant tunneling diode toward an application of THz wireless communication for RoF technologies Michihiko Suhara, Masataka Nakanishi, Shintaro Kitakado (TMU), Kiyoto Asakawa (TMCIT) ED2018-63 |
[more] | ED2018-63 pp.39-42 |
| ED | 2016-12-19 17:20 |
Miyagi | RIEC, Tohoku Univ | Broadband characteristics modeling and radiation analysis of self-complementary bow-tie antennas towards terahertz emitters Hirokazu Yamakura, Michihiko Suhara (Tokyo Metro. Univ.) ED2016-86 |
Recently, th experiments of terahertz(THz) wireless communications have been reported and their techniques are based on ... [more] | ED2016-86 pp.35-40 |
| ED | 2016-07-24 11:25 |
Tokyo | Tokyo Metropolitan Univ. Minami-Osawa Campus, International House | Analysis of terahertz detection characteristics of a rectenna integrated with a semiconductor mesa Takemi Tokuoka, Michihiko Suhara (TMU) ED2016-36 |
We analyse detection characteristics of a zero bias rectenna integrated with a semiconductor mesa for wireless communica... [more] | ED2016-36 pp.45-50 |
| ED | 2015-12-21 14:10 |
Miyagi | RIEC, Tohoku Univ | Theoretical Analysis of GaAsSb-based Backward Diodes on the basis of a non-equilibrium quantum transport model Hisanari Fujita, Kosuke ono, Michihiko Suhara (TMU), Tsuyoshi Takahashi (Fujitsu Lab.) ED2015-93 |
We construct a theoretical model to explain DC I-V characteristics and frequency-dependent S-parameters of GaAsSb-based... [more] | ED2015-93 pp.13-18 |
| ED | 2014-12-22 13:45 |
Miyagi | Transmitter model and its characteristic analysis for simplified terahertz ultra-wideband communications by using tunnel devices Kiyoto Asakawa, Hirokazu Yamakura, Yuto Kato, Kaori Imori, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2014-99 |
It is expected that applications and situations of near-distance wireless communication will increase more and more toge... [more] | ED2014-99 pp.3-8 |
|
| EST | 2013-05-10 16:15 |
Kanagawa | NTT Science and Core Technology Laboratory Group | A study on evaluations of radiated electromagnetic field using the equivalent theorem for bow-tie antennas operating in teraheltz range Hirokazu Yamakura, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) EST2013-10 |
Many of studies have been performed for experimental demonstrations/developments of a transceiver (TX) and a receiver (R... [more] | EST2013-10 pp.51-56 |
| ED | 2012-12-18 11:15 |
Miyagi | Tohoku University | A modeling and analysis of a resonant tunneling diode integrated with a broadband antenna toward terahertz wireless communications Kiyoto Asakawa, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-105 |
When we discuss deeply about system performance of terahertz wireless communication by employing resonant tunneling diod... [more] | ED2012-105 pp.69-74 |
| ED | 2012-07-27 09:55 |
Fukui | Fukui University | Modeling of nonlinear quantum transport for tunnel diodes and theoretical analysis of its cut-off frequency Shin Yamashita, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-49 |
A resonant tunneling diode (RTD) is one of electron devices which can operate at room temperature in the terahertz range... [more] | ED2012-49 pp.43-48 |
| ED | 2012-07-27 10:20 |
Fukui | Fukui University | Large-signal analysis of injection locking and frequency comb properties in array oscillators consisting of resonant tunneling diodes integrated with wideband antennas Kiyoto Asakawa, Atsushi Tashiro, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-50 |
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] | ED2012-50 pp.49-54 |
| ED | 2011-12-14 16:15 |
Miyagi | Tohoku University | Nonlinear analysis for zero bias detection by using a triple-barrier resonant tunneling diode integrated with a ultra wideband antenna Satoshi Takahagi, Mitsufumi Saito, Michihiko Suhara (Tokyo Metropolitan Univ.) ED2011-106 |
Zero bias detection effective to realize low-power consumption and minimization of detector in terahertz frequency regio... [more] | ED2011-106 pp.35-40 |
| ED | 2011-12-14 16:40 |
Miyagi | Tohoku University | Time domain analysis of ultra high speed modulation by using a Resonant Tunneling Diode integrated with an antenna Yosuke Itagaki, Mitsufumi Saito, Michihiko Suhara (Tokyo Metropolitan Univ.) ED2011-107 |
Resonant tunneling diode (RTD) is expected to perform terahertz applications because of its negative differential condu... [more] |
ED2011-107 pp.41-44 |
| ED | 2011-07-30 11:15 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Analysis of a monolithic integrated rectenna for zero bias detection by using bow-tie antenna and triple-barrier resonant tunneling diode Masahito Nakamura, Satoshi Takahagi, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.) ED2011-51 |
[more] | ED2011-51 pp.67-72 |
| ED | 2011-07-30 11:40 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Identification of a nonlinear equivalent circuit in triple-barrier resonant tunneling diodes by using the particle swarm optimization method Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Met. Univ.) ED2011-52 |
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] | ED2011-52 pp.73-77 |
| ED | 2011-07-30 14:20 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Analysis of spin-polarized current using InSb/AlInSb resonant tunneling diodes Masanari Fujita, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.) ED2011-56 |
In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTD... [more] | ED2011-56 pp.97-102 |
| SDM, ED (2nd) |
2011-06-29 - 2011-07-01 |
Overseas | Legend Hotel, Daejeon, Korea | Analysis of spin-polarized current using InSb/AlInSb resonant tunneling diodes Masanari Fujita, Mitsufumi Saito, Michihiko Suhara (Tokyo Metropolitan Univ.) |
In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTD... [more] | |
[Return to Top Page]