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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ICD, ITE-IST [detail] | 2023-08-03 09:30 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
[Invited Talk]
Current issue & development prospects for 2D layered material devices Kosuke Nagashio (UTokyo)  SDM2023-48 ICD2023-27 |
(To be available after the conference date) [more] | SDM2023-48 ICD2023-27 p.60 |
| SDM | 2019-11-07 13:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Understanding the interface in 2D layered transistors Kosuke Nagashio (UTokyo) SDM2019-70 |
[more] | SDM2019-70 pp.9-10 |
| SDM | 2015-01-27 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Analytical formulation of interfacial SiO2scavenging in HfO2/SiO2/Si stacks Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2014-135 |
[more] | SDM2014-135 pp.1-4 |
| SDM | 2014-06-19 15:00 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Ultra-sharp metal-to-insulator transition in a single crystal VO2 thin film by controlling the local stress of transition Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2014-55 |
[more] | SDM2014-55 pp.65-67 |
| SDM | 2014-01-29 09:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Carrier response in band gap and multiband transport in bilayer grapheme under the ultra-high displacement Kosuke Nagashio, K Kanayama, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2013-135 |
[more] | SDM2013-135 pp.1-4 |
| SDM | 2014-01-29 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2013-136 |
We clarified wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-Ns electron mobility was dram... [more] | SDM2013-136 pp.5-8 |
| SDM | 2010-06-22 14:35 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Control of GeO2 Properties and Improvement of Ge/GeO2 Interface Characteristics Based on the Understanding of Geo2/Ge Interface Reaction Koji Kita (Univ. of Tokyo/JST-CREST), Sheng Kai Wang, ChoongHyun Lee, Mahoro Yoshida (Univ. of Tokyo), Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST) SDM2010-43 |
[more] | SDM2010-43 pp.55-60 |
| SDM | 2009-06-19 13:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Fermi Level Pinning at Metal/Germanium Interface and its Controllability Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (The Univ. of Tokyo//JST-CREST) SDM2009-32 |
The purpose is to understand metal/germanium (Ge) junction characteristics to control Schottky barrier height at metal/G... [more] | SDM2009-32 pp.33-38 |
| OME | 2008-10-31 14:15 |
Tokyo | ToKyo Univ. Faculty of Engineering Bldg.6 | Mobility Improvement in Pentacene Thin Film Transistors Prepared in a Low-Pressure H2 Ambient Takamichi Yokoyama, Park Chang Bum, Kosuke Nagashio, Koji Kita, Akira Toriumi (Univ. of Tokyo) OME2008-53 |
[more] | OME2008-53 pp.15-20 |
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