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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED (Workshop) |
2012-06-27 17:45 |
Okinawa | Okinawa Seinen-kaikan | Effective Annealing of Si Films as an advanced LTPS Takashi Noguchi, Takuma Nishinohara, Jean de Dieu Mugiraneza, Katsuya Shirai, Tatsuya Okada (Univ. Ryukyus) |
[more] | |
| SDM, OME | 2012-04-27 16:10 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Control of Crystallization Behavior of Silicon Thin Films by Semiconductor Blue-Multi-Diode-Laser Annealing Katsuya Shirai, Jean de Dieu Mugiraneza, Toshiharu Suzuki, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP)  SDM2012-7 OME2012-7 |
[more] | SDM2012-7 OME2012-7 pp.33-36 |
| SDM, OME | 2012-04-27 16:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Crystallization of Si Thin Film on Poly-Imide Substrate by Semiconductor Blue Multi-Laser Diode Annealing Tatsuya Okada, Jean de Dieu Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, Takashi Noguchi (Univ. Ryukyus), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP) SDM2012-8 OME2012-8 |
Crystallization of a-Si films on polyimide substrate was achieved using Blue Multi-Laser Diode Annealing. Surface roughn... [more] | SDM2012-8 OME2012-8 pp.37-39 |
| SDM, OME | 2012-04-28 11:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Electrical Characterization of SiO2 and SiN Films Deposited by RF Sputtering Keisuke Yagi, Tatsuya Okada, Takashi Noguchi (Univ.Ryukyus) SDM2012-17 OME2012-17 |
SiO2 and SiN films of 100 nm thickness were deposited on the Si substrate by RF sputtering. After thermal annealing, at ... [more] | SDM2012-17 OME2012-17 pp.75-77 |
| SDM, OME | 2012-04-28 11:50 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Crystallization of the Sputtered P-doped Si Films for High Performance Poly-Si TFT Takuma Nishinohara, J. D. Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Tadashi Ohachi (Doshisha Univ.), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP) SDM2012-18 OME2012-18 |
After performing BLDA for phosphorus-doped Si films deposited by sputtering using Ne gas, the crystallinity of the films... [more] | SDM2012-18 OME2012-18 pp.79-82 |
| ITE-IDY, EID | 2011-11-29 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Report IMID (TFTs etc.) Takashi Noguchi (Univ. Ryukyus) |
[more] | |
| ED, SDM | 2010-07-02 10:00 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Acivation behaviour for doped Si films after laser or furnace annealing Takashi Noguchi, Toshiharu Suzuki (Univ. of Ryukyus) ED2010-85 SDM2010-86 |
After excimer laser annealing (ELA) for heavily boron- or phosphorous-doped Si films, the relation between the conductiv... [more] | ED2010-85 SDM2010-86 pp.149-153 |
| SDM, OME | 2010-04-23 11:40 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Simulation of dependency of photo current on intrinsic length in a-Si and c-Si thin film PIN photo sensor Akinori Sakamoto, Takashi Noguchi (University of the Ryukyus), Tadashi Ohachi (Doushisha University), Fumiaki Oshiro, Jean de Dieu Mugiraneza (University of the Ryukyus) SDM2010-5 OME2010-5 |
For hydrogenated amorphous silicon (a-Si:H) and crystal silicon (c-Si) thin film PIN photo sensors, the dependence of ph... [more] | SDM2010-5 OME2010-5 pp.19-22 |
| SDM, OME | 2010-04-23 13:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Influence of Grain Size on Gate Voltage Swing and Threshold Voltage of Poly-Si Thin Film Transistor Fumiaki Oshiro, Akinori Sakamoto, Takashi Noguchi (Univ. of Ryukyus), Tadashi Ohachi (Doshisha Univ.) SDM2010-7 OME2010-7 |
A model of defects in poly-Si film by using grain size was proposed. The gate voltage swing factor S which related to th... [more] | SDM2010-7 OME2010-7 pp.29-32 |
| SDM, OME | 2010-04-23 13:50 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Characterization of Sputtered-Si Films for Photo-Sensor Diodes Jean de Dieu Mugiraneza, Tomoyuki Miyahira, Akinori Sakamoto, Takashi Noguchi (Univ. of Ryukyus), Ching-Ping Chiu, Meng-Hsin Chen, Wen-Chang Yeh (NTUST) SDM2010-8 OME2010-8 |
[more] | SDM2010-8 OME2010-8 pp.33-37 |
| SDM, ED | 2009-06-25 11:45 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Effective Annealing for Si film Takashi Noguchi, Tomoyuki Miyahira, Yeh Chen, Jean de dieu Mugiraneza (Univ. of Ryukyus) ED2009-85 SDM2009-80 |
[more] | ED2009-85 SDM2009-80 pp.153-156 |
| OME, SDM | 2009-04-24 16:40 |
Saga | AIST Kyushu-center | Crystallization and annealing of heavily doped p-type Si film and electronic properties Takashi Noguchi, Tomoyuki Miyahira (Univ. of the Ryukyus), Toshiharu Suzuki (SEN) SDM2009-6 OME2009-6 |
[more] | SDM2009-6 OME2009-6 pp.25-28 |
| SDM, OME | 2008-04-11 10:35 |
Okinawa | Okinawa Seinen Kaikan | Electrical activation of heavily doped Si film by crystallization annealing Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN) SDM2008-4 OME2008-4 |
After UV pulsed excimer laser annealing for highly boron-, or phosphorus dosed Si film, the relationship between the c... [more] |
SDM2008-4 OME2008-4 pp.17-22 |
| SDM, OME | 2008-04-11 11:25 |
Okinawa | Okinawa Seinen Kaikan | Evaluation of stress and crystallinity of laser crystallization polysilicon thin film using UV/Visible Raman spectroscopy Yasuto Kakemura, Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Takashi Noguchi (Univ. of the Ryukyus) SDM2008-6 OME2008-6 |
Low temperature polysilicon (LTPS) thin film is a key material for the systems-on-glass achievement. Depth and in-plane ... [more] | SDM2008-6 OME2008-6 pp.27-32 |
| SDM, OME | 2008-04-12 10:00 |
Okinawa | Okinawa Seinen Kaikan | Low-temperature Solid-Phase Crystallization of a-Ge on Glass Substrate for Advanced Thin-Film transistor Isakane Nakao, Kaoru Toko (Kyushu Univ.), Takashi Noguchi (Univ. Ryukyus), Taizoh Sadoh (Kyushu Univ.) SDM2008-17 OME2008-17 |
Concentrations and mobilities of intrinsic holes in poly-Ge films grown on quartz substrates were investigated. The Hall... [more] | SDM2008-17 OME2008-17 pp.83-88 |
| SDM | 2007-12-14 13:00 |
Nara | Nara Institute Science and Technology | Effective Activation of Phosphorus atom in Si film using ELA Takashi Noguchi (Univ. of Ryukyus) SDM2007-227 |
[more] | SDM2007-227 pp.23-26 |
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