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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SANE 2011-05-20
15:00
Kanagawa National Defense Academy of Japan Research on Realization of A High Power L-Band GaN Module
Hisanori Irie, Hirotaka Hayashi, Takayuki Shimizu, Reiji Satou (TRDI), Takao Fujii (FSI), Akihiko Akasegawa, Hisao Shigematsu, Shouji Amatatsu, Masao Moriwaki (Fujitsu) SANE2011-13
 [more] SANE2011-13
pp.19-23
MW 2009-09-25
15:15
Tokyo Univ. of Electro-Communications C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE
Hisao Shigematsu, Yusuke Inoue, Akihiko Akasegawa, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab.) MW2009-86
In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band pow... [more] MW2009-86
pp.73-78
MW, ED 2009-01-16
09:30
Tokyo Kikai-Shinko-Kaikan Bldg C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency
Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,) ED2008-218 MW2008-183
 [more] ED2008-218 MW2008-183
pp.113-118
SDM, R, ED 2007-11-16
15:20
Osaka   Degradation-Mode Analysis for Highly Reliable GaN-HEMT
Yusuke Inoue, Satoshi Masuda, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Hisao Shigematsu, Kazukiyo Joshin (Fujitsu Labs. Ltd.) R2007-51 ED2007-184 SDM2007-219
 [more] R2007-51 ED2007-184 SDM2007-219
pp.27-31
MW, ED 2005-01-18
15:50
Tokyo   -
Yusuke Inoue, Masaru Sato, Toshihiro Ohki, Kozo Makiyama, Tsuyoshi Takahashi, Hisao Shigematsu, Tatsuya Hirose (Fujitsu Lab.)
 [more] ED2004-224 MW2004-231
pp.71-76
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