IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2011-11-17
11:20
Kyoto Katsura Hall,Kyoto Univ. Decreasing Dislocation Density of MOCVD-GaN Using Silicon Dioxide Masks
Masaru Tanimoto, Shiro Sakai (Tokushima Univ.) ED2011-76 CPM2011-125 LQE2011-99
 [more] ED2011-76 CPM2011-125 LQE2011-99
pp.15-18
LQE, ED, CPM 2011-11-18
14:15
Kyoto Katsura Hall,Kyoto Univ. Growth of (Si)(Ga)AlC(P) thin film on sapphire by metal organic chemical vapor deposition
Yuya Ohnishi, Fumiya Horie, Shiro Sakai (Tokushimadai) ED2011-96 CPM2011-145 LQE2011-119
Al4C3 film was grown by MOCVD by supplying TMA, CH4 on sapphire. Si and P were supplied to make it to dope to n-type. Th... [more] ED2011-96 CPM2011-145 LQE2011-119
pp.117-120
ED, LQE, CPM 2009-11-19
09:00
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) GaN Re-growth Using Ta Mask Which Etches Covering GaN Layer
Kohei Hara, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima) ED2009-128 CPM2009-102 LQE2009-107
Two step growth of GaN is performed, and the metal which is selectively sandwiched into GaN is formed. A GaN downward is... [more] ED2009-128 CPM2009-102 LQE2009-107
pp.1-4
ED, LQE, CPM 2009-11-19
18:00
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) GaN Photodetector with Nanostructure on Surface
Jing Zhang, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima), Atsuyuki Fukano, Satoru Tanaka (SCIVAX) ED2009-146 CPM2009-120 LQE2009-125
Conventional photodetector can detect intensity of incident light by voltage or current, but it is not intensive to the ... [more] ED2009-146 CPM2009-120 LQE2009-125
pp.85-89
LQE, ED, CPM 2008-11-27
13:10
Aichi Nagoya Institute of Technology Electroluminescence study of GaN based devices with several hundreds nano-scale periodic structure fabricated by nano-imprint technique
Mitsuaki Tohno, Zhang Jing, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima), Junzo Wachi (SCIVAX Corp.) ED2008-158 CPM2008-107 LQE2008-102
We have fabricated several hundreds nano-scale periodic structure on p-GaN by using nano-imprint technique and RIE techn... [more] ED2008-158 CPM2008-107 LQE2008-102
pp.29-32
 Results 1 - 5 of 5  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan