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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2010-06-22
13:25		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo The Crystalline Structures and Electrical Properties of PrAlO formed by Atomic Layer Deposition.
Kazuya Furuta, Wakana Takeuchi, Mitsuo Sakashita, Hiroki Kondo, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2010-40		  [more] SDM2010-40
pp.39-42
SDM 2009-06-19
13:20		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation
Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33		 To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] SDM2009-33
pp.39-44
SDM 2009-06-19
14:50		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Effect of ALD-Al2O3 Layer on Interfacial Reaction between LaAlO and Ge
Mitsuo Sakashita, Ryosuke Kato, Shinya Kyogoku, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ.) SDM2009-37		 Ge channel MOSFET with high-k gate dielectric film attract much attention from a viewpoint of realizing high speed and l... [more] SDM2009-37
pp.61-66
SDM 2009-06-19
16:20		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3.
Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-41		 Formation of Pr oxide by atomic layer deposition (ALD) using Pr(EtCp)3 precursor was investigated, and ALD growth of Pr ... [more] SDM2009-41
pp.81-85
SDM 2008-06-10
13:10		 Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Fabrication of Pr oxide films by MOCVD and evaluation of its electrical properties
Hiroki Kondo, Shinya Sakurai (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) SDM2008-54		 Metal organic chemical vapor deposition (MOCVD) of Pr2O3 films using Pr(EtCp)3 and their electrical properties were inve... [more] SDM2008-54
pp.71-75
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