Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2017-10-27 10:50 |
Miyagi |
|
Operation of Field Emitter Arrays under High Dose Rate X-ray Irradiation Morito Teruyuki, Tsuji Hiroshi (Kyoto Univ.), Nagao Masayoshi (AIST), Akiyoshi Masafumi (Osaka Pref. Univ.), Takagi Ikuji, Gotoh Yasuhito (Kyoto Univ.) ED2017-46 |
Performance of a field emitter array (FEA) under high dose rate X-ray irradiation was investigated. All electrodes are n... [more] |
ED2017-46 pp.43-46 |
ED |
2016-10-25 13:25 |
Mie |
|
Operational Characteristics and Analysis of Field Emitter Arrays under X-ray Irradiation Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Masayoshi Nagao (AIST), Masafumi Akiyoshi (Osaka Pref. Univ.), Ikuji Takagi (Kyoto Univ.) ED2016-44 |
[more] |
ED2016-44 pp.5-8 |
ED |
2015-10-22 13:30 |
Aichi |
|
Electron Trajectory and Electrode Geometry of Double-Gated Spindt-Type Field Emitter Array Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Masayoshi Nagao (AIST) ED2015-54 |
[more] |
ED2015-54 pp.1-4 |
ED |
2014-10-21 14:45 |
Hokkaido |
Hokkaido Univ. (Faculty House Trillium) |
A Consideration on Field Calculation near Emitter Surface of Field Emitters Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.) ED2014-65 |
[more] |
ED2014-65 pp.15-17 |
ED |
2013-10-22 15:40 |
Hokkaido |
Enreisou, Hokkaido Univ. |
Design of Extraction System of Field Emitter Arrays for Low Energy Electron Beam Production Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.) ED2013-54 |
[more] |
ED2013-54 pp.17-18 |
ED |
2012-11-20 11:00 |
Osaka |
Osaka Univ. Nakanoshima Center |
Space charge effect in electronic device with field emitter array Yasuhito Gotoh, Yoshiki Yasutomo, Hiroshi Tsuji (Kyoto Univ.) ED2012-63 |
Numerical study on the space charge limited current for the
electron beam extracted from field emitter array with the ... [more] |
ED2012-63 pp.45-48 |
ED |
2011-10-20 14:00 |
Aomori |
|
Rectification of Amplitude Modulated Signals with Vacuum Transistor Yasuhito Gotoh, Keita Ikeda, Wataru Ohue, Yoshiki Yasutomo, Hiroshi Tsuji (Kyoto Univ.) ED2011-59 |
[more] |
ED2011-59 pp.1-4 |
ED |
2011-10-20 14:25 |
Aomori |
|
Mixing characteristics with vacuum tetrode transistor Yoshiki Yasutomo, Wataru Ohue, Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.) ED2011-60 |
[more] |
ED2011-60 pp.5-8 |
ED |
2010-10-25 13:25 |
Kyoto |
|
Surface state and electron emission property of silicon field emitter arrays treated by trifluoromethane plasma Yasuhito Gotoh, Keisuke Endo, Hiroshi Tsuji (Kyoto Univ.), Junzo Ishikawa (Chubu Univ.), Shigeki Sakai (Nissin Ion Equipment) ED2010-129 |
Surface state of the silicon substrate treated by trifluoromethane plasma was analyzed in order to clarify the origin of... [more] |
ED2010-129 pp.7-10 |
ED |
2010-10-26 09:55 |
Kyoto |
|
Frequency characteristics of Vacuum Transistor using Hafunium Nitride Field Emitter Array Keita Ikeda, Wataru Ohue, Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.) ED2010-137 |
Vacuum transistors using field emitter array have been developed for a signal amplifier. We fabricated a gated 40,000-ti... [more] |
ED2010-137 pp.47-50 |
ED |
2010-10-26 10:20 |
Kyoto |
|
Relationship between collector geometry and collector characteristics of vacuum transistor Yasuhito Gotoh, Keita Ikeda, Wataru Ohue, Hiroshi Tsuji (Kyoto Univ.) ED2010-138 |
Relationship between collector geometry and collector characteristics was studied by numerical simulation. The evaluated... [more] |
ED2010-138 pp.51-54 |
ED |
2009-10-15 15:05 |
Fukui |
|
Electron emission characteristics of field emitter array with hafnium nitride cathode Yasuhito Gotoh, Keita Ikeda, Yuko Miyata, Keisuke Endo, Hiroshi Tsuji (Kyoto Univ.) ED2009-119 |
We have fabricated field emitter array (FEA) with hafnium nitride (HfN) cathode.
The electron emission characteristics ... [more] |
ED2009-119 pp.17-20 |
ED |
2008-08-05 09:25 |
Shizuoka |
Sizuoka Univ. Hamamatsu Campus |
Improvement of analog circuits for in situ analysis of field emission properties Yasuhito Gotoh, Michito Kawasaki, Hiroshi Tsuji, Junzo Ishikawa (Kyoto Univ.) ED2008-118 |
We have improved the analog circuits used for the in situ analyzer of
the field emission properties.
The original an... [more] |
ED2008-118 pp.45-48 |
ED |
2008-08-05 09:50 |
Shizuoka |
Sizuoka Univ. Hamamatsu Campus |
Application of silicon field emitter arrays for space charge compensation of low energy ion beam Mitsuaki Takeuchi (Innovation Plaza Kyoto, JST), Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Shigeki Sakai (Nissin Ion Equipment), Tsunenobu Kimoto, Junzo Ishikawa (Kyoto Univ.) ED2008-119 |
We demonstrated a space charge compensation by using a surface-carbonized silicon field emitter array(Si:C-FEA). The Si:... [more] |
ED2008-119 pp.49-52 |
ED |
2006-08-04 09:50 |
Osaka |
Osaka Univ. Convention Center |
Fabrcation of field emission array with hafnium nitride cathode Yasuhito Gotoh, Noriyuki Setojima, Taro Kanzawa, Toshihiko Kojima, Ryoichi Fujii, Hiroshi Tsuji, Junzo Ishikawa (Kyoto Univ.) |
[more] |
ED2006-129 pp.61-62 |
ED |
2005-12-22 13:35 |
Tokyo |
|
Characterization of field emission cathode with S-K chart Yasuhito Gotoh, Hiroshi Tsuji, Junzo Ishikawa (Kyoto Univ.) |
We have examined the reliability of the equi-potential lines and
equi-work function lines given in the previous paper.... [more] |
ED2005-184 pp.11-14 |