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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ITE-IDY, EID, SID-JC [detail] 2023-08-04
15:20		 Online Online (Zoom) [Invited Talk] Development of backplane technologies for stretchable deformable display applications
Masashi Miyakawa, Hiroshi Tsuji, Tatsuya Takei (NHK), Toshihiro Yamamoto (NHK Foundation), Yoshihide Fujisaki, Mitsuru Nakata (NHK) 		 [more]
SDM, OME 2020-04-14
11:10		 Okinawa Okinawaken Seinen Kaikan
(Cancelled, technical report was not issued)		 [Invited Talk] Development of oxide thin-film transistors for large-sized flexible displays
Hiroshi Tsuji, Mitsuru Nakata, Tatsuya Takei, Masashi Miyakawa, Yoshiki Nakajima, Takahisa Shimizu (NHK) 		Large-screen flexible displays using plastic substrates are promising candidates for 8K TV for home use due to their sup... [more]
ITE-IDY, EID, IEE-EDD 2013-01-25
10:02		 Shizuoka Shizuoka Univ. Development of Simulation Models for Oxide Thin-Film Transistors
Hiroshi Tsuji, Mitsuru Nakata, Hiroto Sato, Yoshiki Nakajima, Yoshihide Fujisaki, Tatsuya Takei, Toshihiro Yamamoto, Hideo Fujikake (NHK) 		 [more]
SDM 2011-12-16
14:40		 Nara NAIST Characterization and Modeling of Drain Overshoot Current in Poly-Si Thin Film Transistors
Toshifumi Ota, Hiroshi Tsuji, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2011-142		 Transient characteristics of drain current in poly-Si thin film transistors (TFTs) are investigated experimentally, and ... [more] SDM2011-142
pp.53-58
SDM 2009-12-04
11:20		 Nara NAIST Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs
Yoshinari Kamakura (Osaka Univ.), Takashi Himukashi (Osaka Univ./Kansai Univ.), Hiroshi Tsuji, Kenji Taniguchi (Osaka Univ.) SDM2009-157		 The hysteresis observed in the transfer characteristics of n-channel poly-Si TFTs are experimentally investigated and po... [more] SDM2009-157
pp.35-38
SDM 2009-11-12
14:40		 Tokyo Kikai-Shinko-Kaikan Bldg. Surface-Potential-Based Drain Current Model for Thin-Film Transistors
Hiroshi Tsuji (Osaka Univ/JST), Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2009-138		 A new surface-potential-based drain current model for polycrystalline silicon thin-film transistors (poly-Si TFTs) is pr... [more] SDM2009-138
pp.19-22
SDM 2007-12-14
11:00		 Nara Nara Institute Science and Technology Analysis of Capacitance-Voltage Characteristics of Poly-Si TFTs using Device Simulation
Tsuyoshi Kuzuoka, Hiroshi Tsuji, Masaharu Kirihara, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2007-225		 Capacitance-voltage characteristics of short channel Poly-Si TFTs containing only a single grain boundary were investiga... [more] SDM2007-225
pp.15-18
 Results 1 - 7 of 7  /   
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