| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2012-06-21 10:55 |
Aichi | VBL, Nagoya Univ. | Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)  SDM2012-48 |
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] | SDM2012-48 pp.27-32 |
| SDM | 2012-06-21 11:35 |
Aichi | VBL, Nagoya Univ. | Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-50 |
We have investigated the impact of the gate metal on the chemical bonding state in the metal/Pr-oxide/Ge gate stack stru... [more] | SDM2012-50 pp.37-42 |
| ED, SDM, CPM | 2012-05-18 11:40 |
Aichi | VBL, Toyohashi Univ. of Technol. | Growth and characterization of strained Ge epitaxial layers on SiGe substrates Takashi Yamaha, Osamu Nakatsuka (Nagoya Univ.), Kyoichi Kinoshita, Shinichi Yoda (JAXA), Shigeaki Zaima (Nagoya Univ.) ED2012-32 CPM2012-16 SDM2012-34 |
[more] | ED2012-32 CPM2012-16 SDM2012-34 pp.73-77 |
| SDM | 2012-03-05 15:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characterization of Local Strain around Through Silicon Via Interconnect in Wafer-on-wafer Structures Osamu Nakatsuka (Nagoya Univ.), Hideki Kitada, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima, Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo), Shigeaki Zaima (Nagoya Univ.) SDM2011-184 |
We have investigated the local strain structure in a thinned Si layer stacked on Si substrate for wafer-on-a-wafer appli... [more] | SDM2011-184 pp.47-52 |
| SDM | 2011-07-04 11:40 |
Aichi | VBL, Nagoya Univ. | Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-57 |
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structu... [more] | SDM2011-57 pp.41-46 |
| SDM | 2011-07-04 13:20 |
Aichi | VBL, Nagoya Univ. | Effect of O2 Annealing for Al2O3/Ge Structure on Interfacial Properties Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-59 |
For realizing the next generation complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs), High-k/Ge... [more] | SDM2011-59 pp.51-56 |
| SDM | 2011-07-04 13:40 |
Aichi | VBL, Nagoya Univ. | Control of Interfacial Reactions in Pr Oxide/Ge Structures Based on Valence State of Pr Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-60 |
We have investigated the electrical properties and chemical bonding state of praseodymium (Pr) oxide/Ge and Pr oxide/Pr ... [more] | SDM2011-60 pp.57-62 |
| SDM | 2010-06-22 13:25 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | The Crystalline Structures and Electrical Properties of PrAlO formed by Atomic Layer Deposition. Kazuya Furuta, Wakana Takeuchi, Mitsuo Sakashita, Hiroki Kondo, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2010-40 |
[more] | SDM2010-40 pp.39-42 |
| SDM | 2009-06-19 13:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33 |
To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] | SDM2009-33 pp.39-44 |
| SDM | 2009-06-19 14:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Effect of ALD-Al2O3 Layer on Interfacial Reaction between LaAlO and Ge Mitsuo Sakashita, Ryosuke Kato, Shinya Kyogoku, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ.) SDM2009-37 |
Ge channel MOSFET with high-k gate dielectric film attract much attention from a viewpoint of realizing high speed and l... [more] | SDM2009-37 pp.61-66 |
| SDM | 2009-06-19 16:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3. Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-41 |
Formation of Pr oxide by atomic layer deposition (ALD) using Pr(EtCp)3 precursor was investigated, and ALD growth of Pr ... [more] | SDM2009-41 pp.81-85 |
| SDM | 2008-06-10 13:10 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Fabrication of Pr oxide films by MOCVD and evaluation of its electrical properties Hiroki Kondo, Shinya Sakurai (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) SDM2008-54 |
Metal organic chemical vapor deposition (MOCVD) of Pr2O3 films using Pr(EtCp)3 and their electrical properties were inve... [more] | SDM2008-54 pp.71-75 |
| SDM | 2007-06-08 15:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Growth and Characterization of Pr-Oxide-Based Dielectric Films on Ge Substrates Mitsuo Sakashita, Nobuyuki Kito (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) SDM2007-51 |
A Ge MOSFET with a high-k dielectric film is considered to be an attractive candidate for high performance devices. We ... [more] | SDM2007-51 pp.107-111 |
| SDM | 2006-06-21 14:30 |
Hiroshima | Faculty Club, Hiroshima Univ. | Local carrier trapping and their detrapping process at constant voltage stress in La2O3-Al2O3 composite films Toshifumi Sago, Akiyoshi Seko, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) |
We observed changes in local leakage currents in La2O3-Al2O3 composite films under constant voltage stress using conduct... [more] | SDM2006-45 pp.19-24 |
[Return to Top Page]