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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 34  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-06-21
11:20
Aichi Nagoya Univ. VBL3F Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation
Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka (Nagoya Univ.) SDM2019-26
Ge1−xSnx is a promising channel material for CMOS transistors because of its higher mobilities of both electron and hole... [more] SDM2019-26
pp.5-9
SDM 2019-06-21
12:00
Aichi Nagoya Univ. VBL3F Mechanism of strain relaxation enhancement by ion implantation method for group-IV semiconductor alloy thin film
Hidetaka Sofue, Masahiro Fukuda, Shigehisa Shibayama (Nagoya Univ.), Shigeaki Zaima (Meijo Univ.), Osamu Nakatsuka, (Nagoya Univ.) SDM2019-28
 [more] SDM2019-28
pp.17-20
SDM 2018-06-25
15:35
Aichi Nagoya Univ. VBL3F Modification of Al2O3/SiC interface by oxygen radical irradiation
Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2018-23
To realizing power-saving SiC MOSFET, it is needed to reduce the density of interface traps (Dit) between insulator and ... [more] SDM2018-23
pp.33-36
SDM 2017-06-20
16:30
Tokyo Campus Innovation Center Tokyo Characterization of defects in Ge1-xSnx gate stack structure
Yuichi Kaneda, Shinnichi ike, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2017-29
(To be available after the conference date) [more] SDM2017-29
pp.39-42
SDM 2017-02-06
11:15
Tokyo Tokyo Univ. [Invited Talk] NiGe/Ge contact formation by microwave annealing method for low-thermal budget processing
Osamu Nakatsuka (Grad. Sch. of Eng., Nagoya University), Yoshimasa Watanabe (TEL), Akihiro Suzuki (Grad. Sch. of Eng., Nagoya University), Yoshio Nishi (Dept. of Electrical Engineering, Stanford University), Shigeaki Zaima (IMaSS, Nagoya University) SDM2016-141
 [more] SDM2016-141
pp.11-15
SDM 2016-06-29
13:50
Tokyo Campus Innovation Center Tokyo Characterization of electrically active defects in epitaxial GeSn layer grown on Ge substrate
Yuichi Kaneda, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2016-39
 [more] SDM2016-39
pp.37-41
SDM, OME 2016-04-08
14:20
Okinawa Okinawa Prefectural Museum & Art Museum [Invited Talk] Growth and characterization of Sn-containing group-IV semiconductor thin film
Yosuke Shimura (Sizuoka Univ.), Wakana Takeuchi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2016-5 OME2016-5
Strain and energy band structure can be designed in Sn-containing group-IV semiconductor alloys. Moreover, as these new ... [more] SDM2016-5 OME2016-5
pp.23-26
SDM 2015-06-19
11:30
Aichi VBL, Nagoya Univ. [Invited Lecture] Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface
Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-43
We have investigated the effect of NO-annealing for SiO2/4H-SiC interface properties. The electrical properties of the N... [more] SDM2015-43
pp.27-30
SDM 2015-06-19
14:35
Aichi VBL, Nagoya Univ. Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer
Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-49
In order to realize high-performance Ge-channel CMOS, it is essential to reduce contact resistance at metal/Ge interface... [more] SDM2015-49
pp.57-61
SDM 2015-06-19
14:55
Aichi VBL, Nagoya Univ. Effect of annealing on defects in Ge1-xSnx epitaxial layers
Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-50
In order to control the carrier concentration in Ge1-xSnx epitaxial layer, it is important to understand and control def... [more] SDM2015-50
pp.63-68
OME, SDM 2015-04-30
10:00
Okinawa Oh-hama Nobumoto Memorial Hall [Invited Talk] Formation of high Sn content SiSn films and its band structure -- Aiming for direct-band-gap semiconductor --
Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-9 OME2015-9
This paper reports our recent progress in advanced Sn-assisted low-temperature crystallization methods for Si$_{1-x}$Sn$... [more] SDM2015-9 OME2015-9
pp.35-37
SDM 2015-03-02
11:35
Tokyo Kikai-Shinko-Kaikan Bldg [Invited Talk] Formation of Epitaxial Metal/Gemanium Contacts and Control of Electric Conduction Property at the Interface
Osamu Nakatsuka, Yunsheng Deng, Akihiro Suzuki, Mitsuo Sakashita, Noriyuki Taoka, Shigeaki Zaima (Nagoya Univ.) SDM2014-165
We need to develop the control technology of the electronic property at metal/Ge interfaces for low-power and high-speed... [more] SDM2014-165
pp.17-22
SDM 2014-06-19
10:10
Aichi VBL, Nagoya Univ. Alleviation of Fermi level pinning of Sn/Ge contact
Akihiro Suzuki, Shunsuke Asaba, Jun Yokoi, Masashi Kurosawa, Kimihiko Kato, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-45
 [more] SDM2014-45
pp.11-16
SDM 2014-06-19
11:05
Aichi VBL, Nagoya Univ. Control of Stacking Fault Structures in Ge1-xSnx Epitaxial Growth
Takanori Asano (Nagoya Univ.), Noriyuki Taoka (IHP Microelectronics), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-47
Ge or Ge1-xSnx layer with (110) surface has attracted much attentions for Ge multi-gate MOS transistors. For forming a h... [more] SDM2014-47
pp.21-25
SDM 2014-06-19
16:55
Aichi VBL, Nagoya Univ. [Invited Lecture] Low temperature poly-crystallization of group-IV semiconductor films on insulators -- use of low-melting-point Sn --
Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60
Low temperature growth of Ge1-xSnx on insulators can provide much wider range of options for device fabrication of 3D-LS... [more] SDM2014-60
pp.91-95
CPM, ED, SDM 2014-05-29
14:20
Aichi   Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal
Wakana Takeuchi, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) ED2014-41 CPM2014-24 SDM2014-39
Interaction between Sn and vacancy-related defects in an n-type Ge single crystal have been investigated by deep-level t... [more] ED2014-41 CPM2014-24 SDM2014-39
pp.113-118
SDM 2013-06-18
09:00
Tokyo Kikai-Shinko-Kaikan Bldg. Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-44
For realization of hexagonal Pr2O3 thin film as higher-k gate dielectrics, we have investigated the effect of H2O partia... [more] SDM2013-44
pp.1-6
SDM 2013-06-18
09:20
Tokyo Kikai-Shinko-Kaikan Bldg. Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium
Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45
For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and un... [more] SDM2013-45
pp.7-11
SDM 2013-06-18
09:40
Tokyo Kikai-Shinko-Kaikan Bldg. Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma ox... [more] SDM2013-46
pp.13-18
SDM, ED
(Workshop)
2012-06-29
08:45
Okinawa Okinawa Seinen-kaikan [Invited Talk] Potential of GeSn Alloys for Application to Si Nanoelectronics
Shigeaki Zaima, Yosuke Shimura, Marika Nakamura, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka (Nagoya Univ.)
 [more]
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