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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-27
11:15		 Osaka Osaka City University Media Center Interface states and device characteristics of AlGaN/GaN MIS-HEMTs with HfO2 fabricated by atomic layer deposition
Gosuke Nishino, Toshiharu Kubo, Takashi Egawa (NITech) ED2015-82 CPM2015-117 LQE2015-114		 We previously reported that MIS-HEMTs with Al2O3 fabricated by ALD using both H2O and O3 as oxygen precursors showed goo... [more] ED2015-82 CPM2015-117 LQE2015-114
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