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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
WPT |
2016-03-07 14:55 |
Kyoto |
Kyoto Univ. Uji Campus |
A Small Prototype Model for High-efficient Microwave Power Transmission System Takayuki Matsumuro, Takaki Ishikawa, Yong Huang, Takaki Nishimura, Yu Tsukamoto, Hiroaki Goto, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.) WPT2015-80 |
In a microwave power transmission system, high transmission efficiency can be obtained at a long dis-tance if the recivi... [more] |
WPT2015-80 pp.21-26 |
WPT |
2016-03-08 09:50 |
Kyoto |
Kyoto Univ. Uji Campus |
Development of Several Tens of W Class High Power Rectifier with GaN Schottky Barrier Diodes Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaya Okada, Yuusuke Yoshizumi, Masaki Ueno (SEI) WPT2015-87 |
We aimed to develop high power rectifiers of 2.45 GHz with GaN schottky barrier diodes that had about 100 V of the break... [more] |
WPT2015-87 pp.61-65 |
WPT (2nd) |
2015-12-10 10:00 |
Overseas |
TamKang University, Tamsui Campus |
Development of High Power Rectifier of 2.45 GHz using GaN Schottky Barrier Diodes with high thermal conductive AlN submounts Takaki Nishimura, Tomohiko Mitani, Naoki Shinohara (Kyoto Univ.), Masaki Ueno, Masaya Okada, Yuusuke Yoshizumi (SEI) |
We aimed to develop a high power rectifier of 2.45 GHz with a GaN schottky diode that had 107 V of the breakdown voltage... [more] |
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WPT |
2015-03-25 10:10 |
Kyoto |
Kyoto Univ. Uji Campus |
Development of High Power Rectifier with GaN Schottky Diode Takaki Nishimura, Naoki Shinohara, Tomohiko Mitani (Kyoto Univ.), Masaki Ueno, Yusuke Yoshizumi, Masaya Okada (SEI) WPT2014-102 |
[more] |
WPT2014-102 pp.45-48 |
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