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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2019-06-21 15:45 |
Aichi | Nagoya Univ. VBL3F | New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching Takeaki Yajima (Univ. of Tokyo), Yusuke Samata, Tomonori Nishimura, Akira Toriumi (JST)  SDM2019-32 |
The characteristics of the VO2-channel Mott transistor is systematically studied. The transfer characteristics shows a c... [more] | SDM2019-32 pp.35-38 |
| SDM | 2018-01-30 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96 |
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] | SDM2017-96 pp.21-24 |
| SDM, ICD, ITE-IST [detail] | 2017-08-02 10:50 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | [Invited Talk]
Capacitor-less neuron circuits using metal-insulator transition devices Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2017-44 ICD2017-32 |
The metal-insulator transition of VO2 is exploited in neuromorphic circuits, resulting in a capacitor-less neuron circui... [more] | SDM2017-44 ICD2017-32 pp.107-108 |
| SDM | 2017-01-30 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
General relationship for cation and anion doping effects on ferroelectric HfO2 formation Xu Lun, Shibayama Shigehisa, Izukashi Kazutaka, Nishimura Tomonori, Yajima Takeaki (Univ. of Tokyo), Migita Shinji (AIST), Toriumi Akira (Univ. of Tokyo) SDM2016-137 |
This work discusses the general relationship for cation and anion doping effects on the HfO2 para-/ferroelectric transit... [more] | SDM2016-137 pp.29-32 |
| SDM | 2017-01-30 16:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Novel Functional Passive Element for Future Analogue Signal Processing
-- Fabrication and Application of the VO2 Volatile Switch -- Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2016-138 |
Electronic devices for internet of things (IoT) need to reconcile high functionality with low cost and simplicity. This ... [more] | SDM2016-138 pp.33-36 |
| SDM | 2015-01-27 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Analytical formulation of interfacial SiO2scavenging in HfO2/SiO2/Si stacks Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2014-135 |
[more] | SDM2014-135 pp.1-4 |
| SDM | 2015-01-27 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETs ChoongHyun Lee, Tomonori Nishimura, Cimang Lu, Shoichi Kabuyanagi, Akira Toriumi (Univ. of Tokyo) SDM2014-136 |
[more] | SDM2014-136 pp.5-8 |
| SDM | 2014-11-07 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Interface Engineering for High Mobility Ge MOSFETs: Surface Orientation and Scattering Mechanism ChoongHyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2014-107 |
[more] | SDM2014-107 pp.65-70 |
| SDM | 2014-06-19 15:00 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Ultra-sharp metal-to-insulator transition in a single crystal VO2 thin film by controlling the local stress of transition Takeaki Yajima, Yuma Ninomiya, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2014-55 |
[more] | SDM2014-55 pp.65-67 |
| SDM | 2014-01-29 09:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Carrier response in band gap and multiband transport in bilayer grapheme under the ultra-high displacement Kosuke Nagashio, K Kanayama, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2013-135 |
[more] | SDM2013-135 pp.1-4 |
| SDM | 2014-01-29 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2013-136 |
We clarified wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-Ns electron mobility was dram... [more] | SDM2013-136 pp.5-8 |
| SDM | 2010-06-22 14:35 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Control of GeO2 Properties and Improvement of Ge/GeO2 Interface Characteristics Based on the Understanding of Geo2/Ge Interface Reaction Koji Kita (Univ. of Tokyo/JST-CREST), Sheng Kai Wang, ChoongHyun Lee, Mahoro Yoshida (Univ. of Tokyo), Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo/JST-CREST) SDM2010-43 |
[more] | SDM2010-43 pp.55-60 |
| SDM | 2009-06-19 13:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Fermi Level Pinning at Metal/Germanium Interface and its Controllability Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (The Univ. of Tokyo//JST-CREST) SDM2009-32 |
The purpose is to understand metal/germanium (Ge) junction characteristics to control Schottky barrier height at metal/G... [more] | SDM2009-32 pp.33-38 |
| SDM | 2007-06-08 13:35 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Impact of Interface Reactions on Electrical Characteristics of Ge/High-k Devices Koji Kita, Hideyuki Nomura, Sho Suzuki, Toshitake Takahashi, Tomonori Nishimura, Akira Toriumi (Univ.of Tokyo) SDM2007-47 |
The impact of high-k material selection on the electrical characteristics of high-k/Ge MIS capacitors was investigated. ... [more] | SDM2007-47 pp.85-90 |
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