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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-07-04
16:20		 Aichi VBL, Nagoya Univ. Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering
Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-67		 Resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes have been studided in comp... [more] SDM2011-67
pp.97-102
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