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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-21
13:00		 Shizuoka Shizuoka Univ. (Hamamatsu) Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure
Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba) ED2019-39 CPM2019-58 LQE2019-82		 We have demonstrated the suppression of SCEs in normally-off GaN MOSFETs with deep recessed-gate structure. TCAD simulat... [more] ED2019-39 CPM2019-58 LQE2019-82
pp.29-32
ED, LQE, CPM 2018-11-29
14:15		 Aichi Nagoya Inst. tech. Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing
Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89		 In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] ED2018-35 CPM2018-69 LQE2018-89
pp.13-16
LQE, CPM, ED 2017-12-01
12:55		 Aichi Nagoya Inst. tech. Improvement of PBTI reliability in GaN-MOSFETs
Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba) ED2017-62 CPM2017-105 LQE2017-75		  [more] ED2017-62 CPM2017-105 LQE2017-75
pp.65-68
ED 2009-06-11
16:50		 Tokyo   A study on low damage dry etching for AlGaN/GaN-HEMT
Masahiko Kuraguchi, Miki Yumoto, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) ED2009-43		 Recessed gate structure is promising to improve GaN electric devices. Low damage dry etching technique is required to fo... [more] ED2009-43
pp.37-40
LQE, ED, CPM 2005-10-13
13:30		 Shiga Ritsumeikan Univ. C-band AlGaN/GaN HEMTs with 170W Output Power
Yoshiharu Takada, Hiroyuki Sakurai, Keiichi Matsushita, Kazutoshi Masuda, Shinji Takatsuka, Masahiko Kuraguchi, Takuma Suzuki, Takashi Suzuki, Mayumi Hirose, Hisao Kawasaki, Kazutaka Takagi, Kunio Tsuda (Toshiba) 		As a promising candidate for next generation microwave power devices, AlGaN/GaN HEMTs have attracted much research inter... [more] ED2005-126 CPM2005-113 LQE2005-53
pp.39-42
MW, ED 2005-01-18
13:25		 Tokyo   5W-1.9 GHz-SPDT Switch Using AlGaN/GaN HEMTs
Mayumi Hirose, Yoshiharu Takada, Masahiko Kuraguchi, Tadahiro Sasaki, Takashi Suzuki, Kunio Tsuda (Toshiba) 		A 5W-SPDT switch operating at 1.9 GHz was fabricated using undoped AlGaN/GaN HEMTs. In the HEMT structure, the undoped ... [more] ED2004-219 MW2004-226
pp.41-45
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