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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2015-06-19
14:15		 Aichi VBL, Nagoya Univ. Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology
Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2015-48		 Besides low solubility and activation rate of n-type dopant in Ge, Fermi level pinning (FLP) at metal/Ge interface leads... [more] SDM2015-48
pp.51-55
SDM 2013-06-18
10:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Germanide formation in metal/high-k/Ge gate stacks and its impact on electrical properties
Takuji Hosoi, Iori Hideshima, Yuya Minoura, Ryohei Tanaka (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-47		  [more] SDM2013-47
pp.19-23
SDM 2012-06-21
10:20		 Aichi VBL, Nagoya Univ. High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics
Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-47		 Germanium has recently attracted much attention as a promising channel material for next generation metal-oxide-semicond... [more] SDM2012-47
pp.23-26
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