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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE 2009-12-11
11:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Stable Behavior in InAs/InP MQW DFB laser Using an OBIC Monitor
Tatsuya Takeshita, Tomonari Sato, Manabu Mitsuhara, Yasuhiro Kondo, Hiromi Oohashi (NTT Corp.) LQE2009-143		 We have realized reliable 2.3 $\micron$m wavelength InAs/InP MQW DFB lasers for trace gas monitoring applications. The e... [more] LQE2009-143
pp.25-30
OPE, CPM, R 2008-04-18
14:05		 Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Wear-Out Degradation of a Ru-doped SIBH InGaAsP DFB laser Using an Optical-Beam-Induced Current Monitor
Tatsuya Takeshita, Ryuzo Iga, Mitsuru Sugo, Yasuhiro Kondo (NTT) R2008-3 CPM2008-3 OPE2008-3		 We investigated the degradation behavior of InGaAsP distributed feedback lasers (DFBs) at high temperature by employing ... [more] R2008-3 CPM2008-3 OPE2008-3
pp.11-16
OPE, LQE, OCS 2006-10-13
15:20		 Fukuoka Kyusyu Univ. Chikushi Campus Highly reliable 1.5-μm DFB laser with SIBH structure
Tatsuya Takeshita, Takashi Tadokoro, Ryuzo Iga, Yuichi Tohmori (NTT), Mitsuo Yamamoto (NEL), Mitsuru Sugo (NTT) OCS2006-58 OPE2006-111 LQE2006-100		 We have achieved a DFB laser with high reliability (<1000FITs) at 95°C that is capable of error-free 2.5 Gbps 80 km tran... [more] OCS2006-58 OPE2006-111 LQE2006-100
pp.91-95
OPE, LQE 2006-06-30
10:10		 Tokyo Kikai-Shinko-Kaikan Bldg. 100℃ 10-Gb/s operation of 1.3-μm InGaAsP DFB lasers with Ru-doped semi-insulating buried heterostructure
Ryuzo Iga, Yasuhiro Kondo, Tatsuya Takeshita, Kenji Kishi, Masahiro Yuda (NTT) 		We fabricated 1.3-um InGaAsP DFB lasers buried with a high-resistive ruthenium (Ru)-doped InP and evaluated 10Gb/s opera... [more] OPE2006-16 LQE2006-20
pp.7-10
LQE 2004-12-03
16:30		 Tokyo Kikai-Shinko-Kaikan Bldg. Sudden failure analysis of InGaAs/GaAs strained-layer quantum-well lasers
Tatsuya Takeshita, Mitsuru Sugo, Toru Sasaki, Yuichi Tohmori (NTT) 		Sudden-failure mechanisms of InGaAs/GaAs strained-layer quantum-well lasers (LD) are analyzed by monitoring an optical-b... [more] LQE2004-129
pp.59-64
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