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SDM 2021-11-12
09:30		 Online Online [Invited Talk] Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects
Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.) SDM2021-60		 SiC MOSFETs are promising in high-voltage power applications. However, the performance of MOSFETs has been limited by th... [more] SDM2021-60
pp.38-42
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