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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-12-01
15:50		 Shizuoka   Effects of AlN template polarity on BN grown by MOVPE and high temperature annealing
Yuto Oishi, Shiyu Xiao, Kenjiro Uesugi, Toru Akiyama, Tomohiro Tamano, Hideto Miyake (Mie University) ED2023-35 CPM2023-77 LQE2023-75		  [more] ED2023-35 CPM2023-77 LQE2023-75
pp.94-97
ED, CPM, LQE 2021-11-25
16:05		 Online Online Substrate off-cut angle dependence on fabrication of high-temperature annealed a-plane AlN on r-plane sapphire
Kota Shibutani, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, Shigeyuki Kuboya, Toru Akiyama, Hideto Miyake (Mie Univ.) ED2021-25 CPM2021-59 LQE2021-37		  [more] ED2021-25 CPM2021-59 LQE2021-37
pp.51-54
LQE, CPM, ED 2017-12-01
15:10		 Aichi Nagoya Inst. tech. Fabrication of Polarity-inverted AlN by Face-to-Face Annealing and Application for QPM-SHG
Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito (Mie Univ.), Ryuji Katayama (Osaka Univ.) ED2017-67 CPM2017-110 LQE2017-80		  [more] ED2017-67 CPM2017-110 LQE2017-80
pp.87-90
SDM 2009-06-19
10:20		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo First-Principles Calculations for Interfacial Reaction during Si Oxidation
Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.) SDM2009-28		 The interfacial reaction processes during Si oxidation are investigated based on first-principles total-energy electroni... [more] SDM2009-28
pp.9-13
 Results 1 - 4 of 4  /   
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