Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SCE |
2024-01-23 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of semiconductor qubit simulator based on TCAD technology Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST) |
[more] |
|
SDM |
2023-11-09 15:55 |
Tokyo |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of Quantum Device Simulator toward Large-Scale Integration of Silicon Qubits Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST) SDM2023-67 |
[more] |
SDM2023-67 pp.20-25 |
SDM |
2023-11-10 13:10 |
Tokyo |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Noies Source of MOSFETs Operating at Cryogenic Temperature Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-70 |
There is increasing demand for the development of classic integrated circuits to control qubits for quantum computers. F... [more] |
SDM2023-70 p.35 |
SDM, ICD, ITE-IST [detail] |
2023-08-01 15:25 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F (Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) SDM2023-40 ICD2023-19 |
The assignment of low-frequency noise sources in the cryogenic operation of MOSFET is of great importance because of the... [more] |
SDM2023-40 ICD2023-19 pp.22-27 |
ICD, SDM, ITE-IST [detail] |
2022-08-09 11:50 |
Online |
|
TCAD analysis of threshold voltage increase of short-channel MOSFET in cryogenic operation Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori (AIST) SDM2022-47 ICD2022-15 |
[more] |
SDM2022-47 ICD2022-15 pp.60-63 |
SDM |
2021-11-12 11:30 |
Online |
Online |
[Invited Talk]
Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu) SDM2021-62 |
A cellular automaton method is applied to temperature-dependent mobility modeling of GaN HEMT. The method utilizes numer... [more] |
SDM2021-62 pp.47-52 |
SDM, ICD, ITE-IST [detail] |
2021-08-17 10:15 |
Online |
Online |
[Invited Talk]
Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST) SDM2021-30 ICD2021-1 |
We propose a buried nanomagnet (BNM) realizing high-speed/low-variability silicon spin qubit operation, inspired by buri... [more] |
SDM2021-30 ICD2021-1 pp.1-6 |
SDM |
2020-11-20 16:40 |
Online |
Online |
[Invited Talk]
TCAD simulation for atomic layer channel Tunnel FETs based on ab-initio band calculation Hiderhiro Asai (AIST), Tatsuya Kuroda (Osaka Univ.), Koichi Fukuda, Junichi Attori, Tsutomu Ikegami (AIST), Nobuya Mori (Osaka Univ.) SDM2020-34 |
[more] |
SDM2020-34 pp.58-62 |
OCS, OFT, LSJ (Joint) [detail] |
2020-08-27 14:50 |
Online |
Online |
A Study on Simple Optical Coupling Method for Silicon Photonics Circuits Using Grating Couplers Hongli Yu, Hiroshi Fukudai (CIST), Souichi Kobayashi (PIST), Naoto Yoshimoto (CIST) OFT2020-5 |
A coupling method using a grating coupler is often used as a surface-optical coupling to a silicon photonics integrated ... [more] |
OFT2020-5 pp.15-18 |
SDM |
2019-11-08 09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2019-74 |
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] |
SDM2019-74 pp.27-32 |
SDM, ICD, ITE-IST [detail] |
2019-08-07 14:15 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET Hidehiro Asai, Wen Hsin Chang, Naoya Okada, Koich Fukuda, Toshifumi Irisawa (AIST) SDM2019-37 ICD2019-2 |
Layered transition metal dichalcogenides (TMDCs) have attracted much attention as promising 2D channel
materials which ... [more] |
SDM2019-37 ICD2019-2 pp.7-10 |
SDM |
2019-01-29 09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81 |
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] |
SDM2018-81 pp.1-4 |
LQE, OPE, SIPH |
2018-12-06 17:10 |
Tokyo |
Keio University |
Nonlinear Model for High-speed Wavelength Switching of Tunable Distributed Amplification (TDA-) DFB Laser Hiroki Fukuda, Shunta Kono, Takeshi Kuboki, Kazutoshi Kato (Kyushu Univ.) OPE2018-120 LQE2018-130 SIPH2018-36 |
Optical burst systems and optical packet systems require optical sources capable of high-speed wavelength switching. Tun... [more] |
OPE2018-120 LQE2018-130 SIPH2018-36 pp.115-119 |
LQE, OPE, SIPH |
2018-12-06 17:10 |
Tokyo |
Keio University |
Wavelength Switching Method of DFB Laser for High-speed and Reliable Optical Switch Shunta Kono, Hiroki Fukuda, Takeshi Kuboki, Kazutoshi Kato (Kyushu Univ.) OPE2018-121 LQE2018-131 SIPH2018-37 |
[more] |
OPE2018-121 LQE2018-131 SIPH2018-37 pp.121-124 |
OCS, OPE, LQE |
2018-11-12 17:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg (Tokyo) |
[Special Invited Talk]
Membrane InGaAsP Mach-Zehnder modulator on Si platform Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo (NTT) OCS2018-67 OPE2018-96 LQE2018-85 |
(Advance abstract in Japanese is available) [more] |
OCS2018-67 OPE2018-96 LQE2018-85 pp.31-34 |
SDM |
2018-11-09 14:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74 |
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] |
SDM2018-74 pp.47-52 |
LQE, LSJ |
2018-05-25 13:50 |
Fukui |
|
Monolithic Integration of an 8-channel Directly Modulated Membrane-laser Array and a SiN AWG Filter on Si Hidetaka Nishi, Takuro Fujii, Nikolaos-Panteleimon Diamantopoulos, Koji Takeda, Erina Kanno, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo (NTT) LQE2018-17 |
[more] |
LQE2018-17 pp.29-32 |
SDM |
2018-01-30 11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Perspective of Negative Capacitance FinFETs Investigated by Transient TCAD Simulation Hiroyuki Ota, Shinji Mgita, Tsutomu Ikegami, Junichi Hattori, Hidehiro Asai, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2017-91 |
[more] |
SDM2017-91 pp.1-4 |
OPE |
2017-12-07 13:15 |
Okinawa |
|
[Poster Presentation]
Prompt Stabilization of Optical Wavelength at Tunable Laser after Starting Oscillation Hiroki Fukuda, Kenta Yamaguchi, Takeshi Kuboki, Kazutoshi Kato (Kyushu Univ.) OPE2017-105 |
In the future, high-speed optical switch will be the key to the optical network. We study high-speed wavelength switchin... [more] |
OPE2017-105 pp.83-87 |
SDM |
2017-11-09 15:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
GaN MOS capacitance simulation considering deep traps Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.) SDM2017-66 |
Transient mode device simulation is applied to obtain capacitances of GaN MOS capacitors including deep level traps, and... [more] |
SDM2017-66 pp.27-32 |