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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM, CPM 2021-05-27
Online Online Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array
Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2021-6 CPM2021-6 SDM2021-17
Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable co... [more] ED2021-6 CPM2021-6 SDM2021-17
CPM, ED, SDM 2020-05-29
Aichi Nagoya Institute of Technology
(Cancelled, technical report was not issued)
Fabrication and evaluation of single-electron devices formed by Fe nanodot array
Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.)
SDM, ED, CPM 2019-05-16
Shizuoka Shizuoka Univ. (Hamamatsu) Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode
Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Takashi Morie (Kyushu Inst. Tech.), Yasuo Takahashi (Hokkaido Univ.) ED2019-16 CPM2019-7 SDM2019-14
We present the differences of two mechanisms’ initial states and multilevel switching behavior using Ta2O5-δ ReRAM. For ... [more] ED2019-16 CPM2019-7 SDM2019-14
ED, SDM 2018-02-28
Hokkaido Centennial Hall, Hokkaido Univ. Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films
Yuki Asai, Shusaku Honjo, Takayuki Gyakushi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2017-104 SDM2017-104
Single-electron transistor (SET) is the expected future integrated device with very low power consumption in operation a... [more] ED2017-104 SDM2017-104
ED, SDM 2017-02-24
Hokkaido Centennial Hall, Hokkaido Univ. Fabrication and evaluation of silicon triple quantum dots with a compact device structure
Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (IST. Hokkaido Univ.), Akira Fujiwara (NTT BRL), Yasuo Takahashi (IST. Hokkaido Univ.) ED2016-130 SDM2016-147
Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information pr... [more] ED2016-130 SDM2016-147
Tokyo Tamagawa University An STDP control circuit and its evaluation using a Cu-MoOx-Al resistance change memory fabricated on a Si MOSFET
Kazumasa Tomizaki, Takashi Morie, Hideyuki Ando (Kyushu Inst. Tech.), Atsushi Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) NC2015-70
With the progress of practical implementation of deep learning in neural networks, high-speed and low-power neural hardw... [more] NC2015-70
SDM, ED 2015-02-05
Hokkaido Hokkaido Univ. Highly functionality of three-terminal nanodot array for multi-input and multi-output devices
Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150
Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional... [more] ED2014-141 SDM2014-150
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