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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2008-06-10
13:45		 Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Theoretical Studies on the Charge Trap Mechanisms of MONOS Memories
Kenji Shiraishi, Kenji Kobayashi (Univ of Tsukuba), Takeshi Ishida, Yutaka Okuyama, Renichi Yamada (Central Research Labs., Hitachi) SDM2008-55		  [more] SDM2008-55
pp.77-82
SDM 2007-06-07
13:30		 Hiroshima Hiroshima Univ. ( Faculty Club) Analysis of Electron and Hole Trap in MONOS-type Nonvolatile Memory
Takeshi Ishida, Renichi Yamada, Kazuyoshi Torii (Hitachi), Kenji Shiraishi (Univ. of Tsukuba) SDM2007-31		 For the purpose of providing higher reliability to MONOS (Metal-Oxide-Nitride-Oxide-Silicon) type nonvolatile memory, we... [more] SDM2007-31
pp.1-6
SDM 2007-06-07
13:55		 Hiroshima Hiroshima Univ. ( Faculty Club) Electron Trap Characteristics of Si3N4/SRN/Si3N4 stacked films
Toshiyuki Mine, Takeshi Ishida, Hirotaka Hamamura, Kazuyoshi Torii (Hitachi) SDM2007-32		 For the purpose of providing higher reliability to MONOS (Metal-Oxide-Nitride-Oxide-Silicon) type nonvolatile memory, we... [more] SDM2007-32
pp.7-11
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