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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM, CPM 2021-05-27
15:40
Online Online Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array
Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2021-6 CPM2021-6 SDM2021-17
Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable co... [more] ED2021-6 CPM2021-6 SDM2021-17
pp.23-26
CPM, ED, SDM 2020-05-29
16:25
Aichi Nagoya Institute of Technology
(Cancelled, technical report was not issued)
Fabrication and evaluation of single-electron devices formed by Fe nanodot array
Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.)
 [more]
ED, SDM 2018-02-28
10:00
Hokkaido Centennial Hall, Hokkaido Univ. Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films
Yuki Asai, Shusaku Honjo, Takayuki Gyakushi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2017-104 SDM2017-104
Single-electron transistor (SET) is the expected future integrated device with very low power consumption in operation a... [more] ED2017-104 SDM2017-104
pp.1-6
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