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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, LQE, CPM |
2015-11-27 10:50 |
Osaka |
Osaka City University Media Center |
Interface analysis of Ti/Al-based ohmic contact on AlGaN/GaN structure grown on GaN substrate Dariush H. Zadeh, Tanabe Shinichi, Watanabe Noriyuki, Matsuzaki Hideaki (NTT) |
[more] |
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LQE, ED, CPM |
2014-11-28 15:10 |
Osaka |
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Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2014-94 CPM2014-151 LQE2014-122 |
We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-ci... [more] |
ED2014-94 CPM2014-151 LQE2014-122 pp.103-106 |
CPM, LQE, ED |
2013-11-28 14:20 |
Osaka |
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Investigation on the optimum MQW structure for InGaN/GaN solar cells Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2013-70 CPM2013-129 LQE2013-105 |
We have investigated InGaN/GaN MQW solar cells on the relationship between short circuit current and the MQW structure. ... [more] |
ED2013-70 CPM2013-129 LQE2013-105 pp.31-34 |
ED, LQE, CPM |
2012-11-29 13:30 |
Osaka |
Osaka City University |
Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.) ED2012-70 CPM2012-127 LQE2012-98 |
We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diod... [more] |
ED2012-70 CPM2012-127 LQE2012-98 pp.21-24 |
CPM |
2011-10-27 10:20 |
Fukui |
Fukui Univ. |
MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.) CPM2011-120 |
This paper reports on the MOVPE growth of InxGa1-xN with x up to ~0.49 on AlN/Si(111) substrates. Single-crystalline Inx... [more] |
CPM2011-120 pp.55-58 |
CPM, ED, SDM |
2008-05-16 09:50 |
Aichi |
Nagoya Institute of Technology |
Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi (NTT PH Lab.) ED2008-11 CPM2008-19 SDM2008-31 |
In this letter, we report annealing temperature dependence of Al/Ti/Tl/Ni/Au contact structure on AlGaN/GaN heterostruct... [more] |
ED2008-11 CPM2008-19 SDM2008-31 pp.51-56 |
MW, ED |
2007-01-19 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
High-quality InAlN/GaN HEMT epi-wafer grown on Si (111) substrate by metalorganic chemical vapor deposition Noriyuki Watanabe, Haruki Yokoyama, Masanobu Hiroki, Yasuhiro Oda (NTT), Takuma Yagi (NTT-AT), Takashi Kobayashi (NTT) |
We successfully fabricated high-quality InAlN/GaN high electron mobility transistors (HEMTs) structure on Si(111) substr... [more] |
ED2006-233 MW2006-186 pp.183-187 |
OCS, OPE, LQE |
2005-11-03 17:25 |
Fukuoka |
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100-GHz Optoelectric Integrated Circuits using InP HBTs and a UTC-PD Norihide Kashio, Kenji Kurishima, Kimikazu Sano, Minoru Ida, Noriyuki Watanabe, Hiroyuki Fukuyama, Hirohiko Sugahara, Masami Tokumitsu, Takatomo Enoki (NTT) |
We have monolithically integrated InP HBTs and a UTC-PD by a non-selective regrowth technique. The HBT shows an ft of 26... [more] |
OCS2005-56 OPE2005-86 LQE2005-94 pp.43-46 |
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