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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-27
10:50
Osaka Osaka City University Media Center Interface analysis of Ti/Al-based ohmic contact on AlGaN/GaN structure grown on GaN substrate
Dariush H. Zadeh, Tanabe Shinichi, Watanabe Noriyuki, Matsuzaki Hideaki (NTT)
 [more]
LQE, ED, CPM 2014-11-28
15:10
Osaka   Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2014-94 CPM2014-151 LQE2014-122
We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-ci... [more] ED2014-94 CPM2014-151 LQE2014-122
pp.103-106
CPM, LQE, ED 2013-11-28
14:20
Osaka   Investigation on the optimum MQW structure for InGaN/GaN solar cells
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2013-70 CPM2013-129 LQE2013-105
We have investigated InGaN/GaN MQW solar cells on the relationship between short circuit current and the MQW structure. ... [more] ED2013-70 CPM2013-129 LQE2013-105
pp.31-34
ED, LQE, CPM 2012-11-29
13:30
Osaka Osaka City University Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction
Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.) ED2012-70 CPM2012-127 LQE2012-98
We report an anomalous current-voltage behavior in an n-type GaN/undoped InGaN/undoped GaN/undoped AlGaN/n-type GaN diod... [more] ED2012-70 CPM2012-127 LQE2012-98
pp.21-24
CPM 2011-10-27
10:20
Fukui Fukui Univ. MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content
Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.) CPM2011-120
This paper reports on the MOVPE growth of InxGa1-xN with x up to ~0.49 on AlN/Si(111) substrates. Single-crystalline Inx... [more] CPM2011-120
pp.55-58
CPM, ED, SDM 2008-05-16
09:50
Aichi Nagoya Institute of Technology Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures
Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi (NTT PH Lab.) ED2008-11 CPM2008-19 SDM2008-31
In this letter, we report annealing temperature dependence of Al/Ti/Tl/Ni/Au contact structure on AlGaN/GaN heterostruct... [more] ED2008-11 CPM2008-19 SDM2008-31
pp.51-56
MW, ED 2007-01-19
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. High-quality InAlN/GaN HEMT epi-wafer grown on Si (111) substrate by metalorganic chemical vapor deposition
Noriyuki Watanabe, Haruki Yokoyama, Masanobu Hiroki, Yasuhiro Oda (NTT), Takuma Yagi (NTT-AT), Takashi Kobayashi (NTT)
We successfully fabricated high-quality InAlN/GaN high electron mobility transistors (HEMTs) structure on Si(111) substr... [more] ED2006-233 MW2006-186
pp.183-187
OCS, OPE, LQE 2005-11-03
17:25
Fukuoka   100-GHz Optoelectric Integrated Circuits using InP HBTs and a UTC-PD
Norihide Kashio, Kenji Kurishima, Kimikazu Sano, Minoru Ida, Noriyuki Watanabe, Hiroyuki Fukuyama, Hirohiko Sugahara, Masami Tokumitsu, Takatomo Enoki (NTT)
We have monolithically integrated InP HBTs and a UTC-PD by a non-selective regrowth technique. The HBT shows an ft of 26... [more] OCS2005-56 OPE2005-86 LQE2005-94
pp.43-46
 Results 1 - 8 of 8  /   
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