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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED
(Workshop)		 2012-06-29
10:15		 Okinawa Okinawa Seinen-kaikan Vertical InGaAs MOSFET with HfO2 gate
Jun Hirai, Tomoki Kususaki, Shunsuke Ikeda, Yasuyuki Miyamoto (Tokyo Tech) 		 [more]
ED, SDM, CPM 2012-05-18
09:00		 Aichi VBL, Toyohashi Univ. of Technol. High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa
Masashi Kashiwano, Jun Hirai, Shunsuke Ikeda, Motohiko Fujimatsu, Yasuyuki Miyamoto (TITech) ED2012-26 CPM2012-10 SDM2012-28		 We fabricated a vertical metal-insulator-semiconductor feld-effect transistor (MISFET) with a heterostructure launcher a... [more] ED2012-26 CPM2012-10 SDM2012-28
pp.43-48
MW, ED 2011-01-14
13:25		 Tokyo Kikai-Shinko-Kaikan Bldg. III-V quantum well channel MOSFET with back electrode
Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech) ED2010-188 MW2010-148		 III-V compound semiconductors are one of the candidates as high mobility channel materials for future high performance l... [more] ED2010-188 MW2010-148
pp.69-73
ED, MW 2010-01-14
10:00		 Tokyo Kikai-Shinko-Kaikan Bldg InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric
Toru Kanazawa, Kazuya Wakabayashi, Hisashi Saito, Ryosuke Terao, Tomonori Tajima, Shunsuke Ikeda, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-181 MW2009-164		 III-V semiconductor device technology will potentially be combined with the LSI technology to realize circuits with capa... [more] ED2009-181 MW2009-164
pp.39-42
 Results 1 - 4 of 4  /   
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