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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2009-10-30
13:00		 Miyagi Tohoku University Recovery from Reactive Ion Etching Damage in SiO2 Films
Nobuhito Kawada, Satoshi Nagashima, Toru Ichikawa, Hiroshi Akahori (Toshiba Corp.) SDM2009-129		 As the MOS device shrinkage progress, the influence of RIE(Reactive Ion Etching) damage becomes remarkable. Especially, ... [more] SDM2009-129
pp.51-56
SDM 2008-10-10
15:45		 Miyagi Tohoku Univ. Influence of B and P dopants on SiO2 film characteristics
Satoshi Nagashima, Hiroshi Akahori (Toshiba) SDM2008-166		 In general, the silicon material that has doped impurities such as phosphorus, boron, and arsenic to the diffusion and t... [more] SDM2008-166
pp.63-68
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