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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM |
2011-10-26 14:55 |
Fukui |
Fukui Univ. |
MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range Toru Hotta, Kenichi Sugita, A. G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) CPM2011-113 |
MOVPE growth of InAlN and InGaN has been studied in order to develop basic technologies for InAlN/InGaN heterostructure ... [more] |
CPM2011-113 pp.23-26 |
CPM |
2011-10-27 10:20 |
Fukui |
Fukui Univ. |
MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.) CPM2011-120 |
This paper reports on the MOVPE growth of InxGa1-xN with x up to ~0.49 on AlN/Si(111) substrates. Single-crystalline Inx... [more] |
CPM2011-120 pp.55-58 |
CPM |
2011-10-27 10:45 |
Fukui |
Fukui Univ. |
MOVPE growth of InN using NH3 decomposition catalyst Dazio Hironaga, Kenichi Sugita, A.g. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ.of Fukui) CPM2011-121 |
In order to increase the NH3 decomposition rate in the MOVPE growth of InN, the employment of Pt catalyst has been propo... [more] |
CPM2011-121 pp.59-62 |
CPM, ED, LQE |
2007-10-12 16:30 |
Fukui |
Fukui Univ. |
Atmospheric-pressure MOVPE growth of In-rich (1~0.5) InAlN Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Fukui Univ.) ED2007-178 CPM2007-104 LQE2007-79 |
[more] |
ED2007-178 CPM2007-104 LQE2007-79 pp.109-112 |
CPM |
2006-11-10 10:15 |
Ishikawa |
Kanazawa Univ. |
Degradation of MOVPE InN during the growth Kenichi Sugita, Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) |
[more] |
CPM2006-125 pp.71-74 |
CPM |
2005-11-12 09:00 |
Fukui |
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KOH etching effects of GaN buffer in MOVPE growth of InN on sapphire substrate Yasuhiko Nagai, Hiroshi Miwa, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) |
The KOH etching effects of a GaN buffer in the MOVPE growth of InN on sapphire have been studied. With increasing etchin... [more] |
CPM2005-161 pp.1-4 |
CPM |
2005-11-12 09:25 |
Fukui |
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Growth and Characterization of MOVPE InN Films on Bulk GaN Substrate Wen-Jun Wang, Hiroshi Miwa, Yasuhiko Nagai, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) |
Single-crystalline In- and N-polarity InN films on bulk GaN substrate were successfully grown by MOVPE. The InN layers g... [more] |
CPM2005-162 pp.5-8 |
CPM |
2005-11-12 09:50 |
Fukui |
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Photocatalytic H2S decomposition by InN1-xOx films grown by ArF laser-assisted MOCVD Masayoshi Miyanishi (Univ. of Fukui), Naoya Takahashi (Fukui NCT), Takahiro Kobayashi (Univ. of Fukui), Katsumi Takayama (Fukui NCT), Yukio Nambo (Nicca), Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) |
An InN1-xOx, which is an alloy of InN with In2O3, is grown at a low (RT-500ºC) temperature by the ArF excimer laser... [more] |
CPM2005-163 pp.9-12 |
CPM |
2005-11-12 10:15 |
Fukui |
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MOVPE growth of high-quality InN on 3c-SiC/Si template Myung Soo Cho, Takahiro Kobayashi, Naoki Sawazaki, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center) |
In this paper, We describe the comparison between MOVPE InN films grown on a 3c-SiC/Si(111) template formed by C+-ion im... [more] |
CPM2005-164 pp.13-16 |
CPM |
2005-11-12 10:40 |
Fukui |
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MOVPE growth of GaN on 3c-SiC/Si template
-- Nitridation effects of template surface -- Naoki Sawazaki, Takahiro Kobayashi, Myung Soo Cho, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Yoshifumi Ito (Wakasa-wan Energy Research Center) |
When a MOVPE GaN film is grown on a 3c-SiC/Si template formed by C+-ion implantation into Si, the surface of the grown f... [more] |
CPM2005-165 pp.17-20 |
LQE, ED, CPM |
2005-10-13 09:50 |
Shiga |
Ritsumeikan Univ. |
NH3/TMI molar ratio dependence of electrical and optical properties for atmospheric-pressure MOVPE InN Hiroshi Miwa, Yasuhiko Nagai, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) |
[more] |
ED2005-119 CPM2005-106 LQE2005-46 pp.5-8 |
LQE, ED, CPM |
2005-10-13 12:00 |
Shiga |
Ritsumeikan Univ. |
Mg doping of MOVPE InN using CP2Mg Yasuhiko Nagai, Hiroshi Miwa, , Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) |
[more] |
ED2005-125 CPM2005-112 LQE2005-52 pp.35-38 |
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