Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2024-06-21 12:10 |
Osaka |
Kwansei Gakuin Univ., Umeda Campus |
[Invited Talk]
Random Potential Induced Characteristics Variations in MOSFETs Nobuya Mori (Osaka Univ.) |
[more] |
|
SDM |
2023-11-09 14:00 |
Tokyo |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Quantum Transport Simulation for Analysis of Surface Roughness Scattering in Semiconductor Nanosheet Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2023-65 |
A numerical method is proposed to calculate the transport mean free path of single-mode semiconductor nanosheets with su... [more] |
SDM2023-65 pp.10-15 |
SDM |
2020-11-20 15:40 |
Online |
Online |
[Invited Talk]
NEGF simulation of band-to-band tunneling in van der Waals heterostructures Nobuya Mori, Futo Hashimoto, Takaya Mishima, Hajime Tanaka (Osaka Univ) SDM2020-33 |
Inter-layer band-to-band tunneling is investigated by using the nonequilibrium Green function (NEGF) method. After stud... [more] |
SDM2020-33 pp.52-57 |
SDM |
2020-11-20 16:40 |
Online |
Online |
[Invited Talk]
TCAD simulation for atomic layer channel Tunnel FETs based on ab-initio band calculation Hiderhiro Asai (AIST), Tatsuya Kuroda (Osaka Univ.), Koichi Fukuda, Junichi Attori, Tsutomu Ikegami (AIST), Nobuya Mori (Osaka Univ.) SDM2020-34 |
[more] |
SDM2020-34 pp.58-62 |
SDM |
2018-11-09 10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Modeling of Electron Transport in 4H-SiC MOS Inversion Layers Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71 |
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] |
SDM2018-71 pp.35-40 |
SDM |
2017-11-10 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Quantum Transport Simulation of Ultra-Small Transistors Nobuya Mori, Gennady Mil'nikov (Osaka Univ), Junichi Iwata, Atsushi Oshiyama (Univ of Tokyo) SDM2017-69 |
We have developed a quantum transport simulator for ultra-small transistors. The simulator is based on a nonequilibrium... [more] |
SDM2017-69 pp.43-46 |
SDM |
2015-11-05 11:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of Ultra-High-Speed Image Sensor with Monte Carlo Simulation Natsumi Minamitani (Osaka Univ.), Vu Truon Son Dao, Kazuhiro Shimonomura, Takeharu Goji Etoh (Ritsumeikan Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.) SDM2015-86 |
We computationally investigate the fundamental properties of electron transport in the backside-illuminated CCD image se... [more] |
SDM2015-86 pp.13-17 |
SDM |
2015-01-27 11:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Coupled Monte Carlo Simulation of Transient Electron-Phonon Transport in Small FETs Yoshinari Kamakura, Indra Nur Adisusilo, Kentaro Kukita, Go Wakimura (Osaka Univ.), Shunsuke Koba, Hideaki Tsuchiya (Kobe Univ.), Nobuya Mori (Osaka Univ.) SDM2014-139 |
[more] |
SDM2014-139 pp.17-20 |
SDM |
2014-11-07 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.) SDM2014-105 |
Recently, we have developed a Monte Carlo simulator for accurately extracting quasi-ballistic transport parameters in MO... [more] |
SDM2014-105 pp.53-58 |
SDM |
2013-11-14 10:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
2013 SISPAD Review
-- transport and reliability -- Nobuya Mori (Osaka Univ.) SDM2013-99 |
The 2013 International Conference on Simulation of Semiconductor Processes and Devices was held on September 3--5, 2013 ... [more] |
SDM2013-99 pp.1-4 |
SDM |
2013-11-15 13:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) SDM2013-111 |
In this study, the impact of source-drain (SD) direct tunneling in III-V metal-oxide-semiconductor field-effect transist... [more] |
SDM2013-111 pp.65-70 |
SDM |
2012-11-16 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Impact of Discrete Dopant in Characteristics of Nanowire Transistors
-- KMC and NEGF Study -- Nobuya Mori (Osaka Univ.), Masashi Uematsu (Keio Univ.), Hideki Minari, Gennady Mil'nikov (Osaka Univ.), Kohei M. Itoh (Keio Univ.) SDM2012-107 |
Impacts of discrete dopant in source and drain extensions on characteristics of silicon nanowire transistors have been n... [more] |
SDM2012-107 pp.43-46 |
SDM |
2010-11-12 15:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Strain Dependence of Hole Currents in Silicon Nanowire FETs Hideki Minari (Osaka Univ./JST-CREST), Tatsuro Kitayama, Masahiro Yamamoto (Osaka Univ.), Nobuya Mori (Osaka Univ./JST-CREST) SDM2010-183 |
Hole transport simulation based on the nonequilibrium Green's function and tight-binding formalism has been performed fo... [more] |
SDM2010-183 pp.65-69 |
SDM |
2009-11-13 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Transistors Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Kenji Taniguchi (Osaka Univ.) SDM2009-142 |
Hot phonon generation and its impact on the current conduction in nanoscale Si-MOSFETs are investigated using numerical ... [more] |
SDM2009-142 pp.39-44 |
SDM |
2009-11-13 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
R-matrix method for quantum transport simulation in atomistic modeling Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ./JST) SDM2009-143 |
A discrete analog of the R-matrix method is presented for atomistic quantum transport calculations. The method enables ... [more] |
SDM2009-143 pp.45-48 |
SDM [detail] |
2008-11-14 15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) SDM2008-179 |
A comprehensive and rigorous study of the impact of single attractive ion in undoped channel MGFETs is presented by usin... [more] |
SDM2008-179 pp.61-66 |
SDM [detail] |
2008-11-14 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Three-dimensional NEGF simulation of gate tunnel current in ultra-small MOSFETs Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) SDM2008-180 |
We have numerically studied gate-tunneling in ultra-small MOSFETs within a three-dimensional nonequilibrium Green’s func... [more] |
SDM2008-180 pp.67-70 |
SDM, VLD |
2007-10-30 10:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Coarse-grain quantum transport simulation of ultra-small MOSFETs Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) VLD2007-52 SDM2007-196 |
[more] |
VLD2007-52 SDM2007-196 pp.11-14 |
SDM, VLD |
2007-10-30 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Crystalline Orientation effects on device characteristics in ultra-small multi-gate devices Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) VLD2007-53 SDM2007-197 |
Atomistic hole transport simulation based on a nonequilibrium Green's function method and tight-binding approximation ha... [more] |
VLD2007-53 SDM2007-197 pp.15-18 |
SDM, VLD |
2006-09-26 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
To be announced Hideki Minari, Nobuya Mori (Osaka Univ.) |
We have numerically calculated ballistic current in one-dimensional silicon nanostructures with a strained layer using a... [more] |
VLD2006-48 SDM2006-169 pp.55-58 |