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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-11-10
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117		 A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] SDM2011-117
pp.11-15
SDM, ICD 2011-08-26
09:50		 Toyama Toyama kenminkaikan Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-85 ICD2011-53		 A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] SDM2011-85 ICD2011-53
pp.75-78
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