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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2014-12-12
10:00		 Kyoto Kyoto University Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108		 We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] EID2014-13 SDM2014-108
pp.1-6
SDM, EID 2014-12-12
10:15		 Kyoto Kyoto University Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs
Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-14 SDM2014-109		 We fabricated $langle$100$rangle$, $langle$110$rangle$, $langle$111$rangle$, and $langle$112$rangle$ p-channel Gate-All-... [more] EID2014-14 SDM2014-109
pp.7-11
SDM 2013-12-13
16:40		 Nara NAIST Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-131		 We calculated the phonon-limited electron mobility of Ge nanowires with rectangular cross sections using a tight-binding... [more] SDM2013-131
pp.91-96
SDM 2011-12-16
16:20		 Nara NAIST Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section
Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2011-146		 We calculated the conduction band structures of [001]- and [110]-oriented Si nanowires with rectangular cross section us... [more] SDM2011-146
pp.77-82
SDM 2010-12-17
10:00		 Kyoto Kyoto Univ. (Katsura) Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations
Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2010-185		 Thin <100> Si-nanowire (Si-NW) MOSFETs were fabricated to characterize the quantum confinement effect in Si NWs. The cro... [more] SDM2010-185
pp.1-6
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