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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-26
14:25		 Osaka Osaka City University Media Center A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD)
Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2015-75 CPM2015-110 LQE2015-107		 A GaN-based trench hybrid-junction diode (THD) on a GaN substrate with a high current and low threshold voltage is prese... [more] ED2015-75 CPM2015-110 LQE2015-107
pp.39-42
ED, MW 2012-01-12
14:30		 Tokyo Kikai-Shinko-Kaikan Bldg High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer
Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2011-137 MW2011-160		  [more] ED2011-137 MW2011-160
pp.101-105
MW, ED 2009-01-14
15:25		 Tokyo Kikai-Shinko-Kaikan Bldg GaN-based Natural Super Junction Diodes
Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2008-202 MW2008-167		 We propose a new breakdown mechanism of GaN-based electron devices called “Natural Super Junction”. The junction model i... [more] ED2008-202 MW2008-167
pp.23-27
SDM, ED 2008-07-11
10:50		 Hokkaido Kaderu２・７ High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation
Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92		 We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] ED2008-73 SDM2008-92
pp.177-181
ED, MW 2008-01-16
16:15		 Tokyo Kikai-Shinko-Kaikan Bldg. 10400V Blocking Voltage AlGaN/GaN Power HFET
Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144		 We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] ED2007-213 MW2007-144
pp.39-43
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