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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2009-06-19
15:10
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics
Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] SDM2009-38
pp.67-70
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