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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2015-04-16 16:05 |
Nagano |
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[Invited Lecture]
A Low-Power 64Gb MLC NAND-Flash Memory in 15nm CMOS Technology Mario Sako, Takao Nakajima, Junpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kono, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Yoshinao Suzuki, Yoshihisa Watanabe (Toshiba), Ryuji Yamashita (SanDisk) ICD2015-6 |
A 75mm2 low power 64Gb MLC NAND flash memory capable of 30MB/s program throughput and 533MB/s data transfer rate at 1.8V... [more] |
ICD2015-6 pp.27-30 |
ICD |
2012-04-23 13:20 |
Iwate |
Seion-so, Tsunagi Hot Spring (Iwate) |
[Invited Talk]
128Gb 3-Bit Per Cell NAND Flash Memory on 19nm Technology with 18MB/s Write Rate Teruhiko Kamei, Yan Li, Seungpil Lee, Ken Oowada, Hao Nguyen, Qui Nguyen, Nima Mokhlesi, Cynthia Hsu, Jason Li, Venky Ramachandra, Masaaki Higashitani, Tuan Pham, Mitsuyuki Watanabe (SanDisk), Mitsuaki Honma, Yoshihisa Watanabe (Toshiba) ICD2012-2 |
A 128Gb 8-level NAND flash memory using 19nm CMOS technology has been developed. 128Gb is the largest single-chip capaci... [more] |
ICD2012-2 pp.7-12 |
ICD |
2009-04-14 13:50 |
Miyagi |
Daikanso (Matsushima, Miyagi) |
A 7.8MB/s 64Gb 4bit/Cell NAND Flash Memory in 43nm CMOS Mitsuaki Honma (Toshiba Corp.), Cuong Trinh (SanDisk Corp.), Noboru Shibata, Takeshi Nakai, Mikio Ogawa, Junpei Sato, Yoshikazu Takeyama, Katsuaki Isobe (Toshiba Corp.), Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei (SanDisk Corp.), Kiyoaki Iwasa (Toshiba Corp.) ICD2009-9 |
A 4bit/cell with 43nm CMOS technology NAND flash memory is realized.
64Gb/die is largest capacity.
To achieve 16 leve... [more] |
ICD2009-9 pp.43-46 |
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