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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPSY, DC, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC [detail] 2017-03-10
17:00		 Okinawa Kumejima Island A Scalable Data Centric Converged System for Big Data Analytics
Yuki Sasaki, Kenji Takahashi, Keishi Sakanushi, Atsuhiro Kinoshita (Toshiba) CPSY2016-162 DC2016-108		 Data analytics for IoT market is the most important issue today. Data needs to be converted to relevant information in a... [more] CPSY2016-162 DC2016-108
pp.399-404
ICD, SDM 2009-07-16
15:50		 Tokyo Tokyo Institute of Technology The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation
Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba) SDM2009-107 ICD2009-23		 The trade-off between Tinv scaling and carrier mobility () degradation in deeply scaled HK/MG nMOSFETs has been ... [more] SDM2009-107 ICD2009-23
pp.53-56
SDM 2009-06-19
15:40		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition
Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.) SDM2009-39		 Intrinsic correlation between mobility reduction by remote Coulomb scattering (RCS) and threshold voltage shift (ΔVt), b... [more] SDM2009-39
pp.71-76
SDM 2006-06-22
15:30		 Hiroshima Faculty Club, Hiroshima Univ. Work Functions at Impurity Pileup Ni-FUSI/SiO(N) Interface and FUGE(Fully Germanided) gates
Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Masato Koyama, Junji Koga, Akira Nishiyama (Toshiba Co,) 		In this paper, we show the results of our recent work on work function control in metal gate, which is one of the most d... [more] SDM2006-64
pp.125-130
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