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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-11-09
09:20		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Topography Simulation of Trench-Filling Growth of 4H-SiC
Kazuhiro Mochizuki, Shiyang Ji, Ryoji Kosugi, Yoshiyuki Yonezawa, Hajime Okumura (AIST) SDM2018-70		 A topography-simulation model is proposed to simulate chemical-vapor-deposition (CVD) trench filling for 4H-SiC superjun... [more] SDM2018-70
pp.29-34
SDM 2016-11-11
11:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Simulation Studies Contributing to Development of Wide-Bandgap Power Semiconductor Devices
Kazuhiro Mochizuki (AIST) SDM2016-85		 Studies contributing to wide-bandgap semiconductor (e.g., 4H-SiC and 2H-GaN) power devices, using commercial process and... [more] SDM2016-85
pp.37-42
ED, MW 2012-01-11
14:05		 Tokyo Kikai-Shinko-Kaikan Bldg Photon-recycling GaN p+n Diodes
Kazuhiro Mochizuki (Hitachi, Ltd.), Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose (Hosei Univ.), Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya (Hitachi Cable, Ltd.), Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya (Hitachi, Ltd.), Tohru Nakamura (Hosei Univ.) ED2011-125 MW2011-148		 Photon recycling was used to increase ionization of Mg in GaN p+n diodes by reducing anode radius down to 20 microns. Th... [more] ED2011-125 MW2011-148
pp.35-40
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