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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD, SDM, ITE-IST [detail] | 2016-08-03 09:00 |
Osaka | Central Electric Club | [Invited Talk]
SRAM PUF using Polycrystalline Silicon Channel FinFET and Its Evaluation Shin-ichi O'uchi, Yungxun Liu, Yohei Hori, Toshifumi Irisawa, Hiroshi Fuketa, Yukinori Morita, Shinji Migita, Takahiro Mori, Tadashi Nakagawa, Junichi Tsukada, Hanpei Koike, Meishoku Masahara, Takashi Matsukawa (AIST)  SDM2016-60 ICD2016-28 |
[more] | SDM2016-60 ICD2016-28 pp.83-87 |
| SDM | 2016-01-28 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Understanding of BTI for Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yuki Ishikawa, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Yongxun Liu, Shinichi O'uchi, Junichi Tsukada, Hiromi Yamauchi, Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo (AIST) SDM2015-122 |
(To be available after the conference date) [more] | SDM2015-122 pp.9-12 |
| SDM | 2015-01-27 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shinichi Ohuchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-143 |
The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k ... [more] | SDM2014-143 pp.33-36 |
| SDM | 2015-01-27 16:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Scaling Breakthrough for Analog/Digital Circuits by Suppressing Variability and Low-Frequency Noise for FinFETs by Amorphous Metal Gate Technology Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Kazuhiko Endo, Shinichi O'uchi, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-145 |
[more] | SDM2014-145 pp.41-44 |
| SDM | 2015-01-27 16:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of Less than 60 mV/decade and Very Low (pA/um) Off-Current on a Si CMOS Platform Yukinori Morita, Takahiro Mori, Koichi Fukuda, Wataru Mizubayashi, Shinji Migita, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-146 |
Complementary (p- and n-type) tunnel FinFETs operating with subthreshold slopes (SSs) of less than 60 mV/decade and very... [more] | SDM2014-146 pp.45-48 |
| ICD, SDM | 2014-08-04 13:05 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | [Invited Talk]
Research progress in steep slope devices and technologies to enhance ON current in TFETs Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-67 ICD2014-36 |
Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recen... [more] | SDM2014-67 ICD2014-36 pp.29-34 |
| ICD | 2014-04-18 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Multigate FinFET Device and Circuit Technology for 10nm and Beyond Meishoku Masahara, Kazuhiko Endo, Shin-ichi Ouchi, Takashi Matsukawa, Yongxun Liu, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota (AIST) ICD2014-15 |
One of the biggest challenges for the VLSI circuits with 20-nm-technology nodes and beyond is to overcome the issue of a... [more] | ICD2014-15 pp.77-82 |
| SDM | 2014-01-29 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2013-138 |
The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and re... [more] | SDM2013-138 pp.13-16 |
| SDM, ICD | 2013-08-01 09:25 |
Ishikawa | Kanazawa University | Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Kazuhiko Endo, Takashi Matsukawa, Shin-ichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2013-66 ICD2013-48 |
A synthetic electric field effect to enhance the performance of tunnel field-effect transistors (TFETs) is proposed. The... [more] | SDM2013-66 ICD2013-48 pp.7-12 |
| ICD, ITE-IST | 2013-07-05 16:50 |
Hokkaido | San Refre Hakodate | A Study on 1/f Noise Characteristic in Independent-Double-Gate-FinFET Hideo Sakai (Keio Univ.), Shin-ichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Yuki Ishikawa, Junichi Tsukada, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Meishoku Masahara (AIST), Hiroki Ishikuro (Keio Univ.) ICD2013-43 |
In this work, we measured 1/f noise of Independent-Double-Gate- (IDG-) FinFET which has two independent gates. Flicker n... [more] | ICD2013-43 pp.119-124 |
| SDM | 2012-11-16 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Nonlocal band to band tunneling model for tunnel-FETs
-- Device and circuit models -- Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota (AIST) SDM2012-111 |
Device and compact models for tunnel-FETs are developed based on nonlocal band to band tunneling model. For device model... [more] | SDM2012-111 pp.63-68 |
| SDM, ED (Workshop) |
2012-06-29 10:45 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Decomposition analysis of on-current variability of FinFETs Takashi Matsukawa, Yongxun Liu, Kazuhiko Endo, Shinichi O'uchi, Meishoku Masahara (AIST) |
[more] | |
| ICD | 2011-04-19 10:55 |
Hyogo | Kobe University Takigawa Memorial Hall | 0.5-V FinFET SRAM Using Dynamic-Threshold-Voltage Pass Gates Shin-ichi O'uchi, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara (AIST) ICD2011-11 |
This article presents a FinFET SRAM which salvages malfunctioned bits caused by random variation. In the presenting SRAM... [more] | ICD2011-11 pp.59-63 |
| SDM, ED | 2011-02-23 16:30 |
Hokkaido | Hokkaido Univ. | A Study on Precise FinFET High Frequency Characteristic Evaluation Method Hideo Sakai (Keio Univ.), Shinichi Ouchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara (AIST), Hiroki Ishikuro (Keio Univ.) ED2010-198 SDM2010-233 |
In recent years, different research groups have been focusing on FinFET transistor research as an excellent replacement ... [more] | ED2010-198 SDM2010-233 pp.37-42 |
| ICD, SDM | 2010-08-27 16:25 |
Hokkaido | Sapporo Center for Gender Equality | On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs Yongxun Liu, Kazuhiko Endo, Shinich Ouchi (AIST), Takahiro Kamei (Meiji Univ.), Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa (AIST), Tetsuro Hayashida (Meiji Univ.), Kunihiro Sakamoto, Takashi Matsukawa (AIST), Atsushi Ogura (Meiji Univ.), Meishoku Masahara (AIST) SDM2010-151 ICD2010-66 |
The threshold voltage (Vt) variability in scaled FinFETs with gate length down to 20 nm was systematically investigated.... [more] | SDM2010-151 ICD2010-66 pp.149-154 |
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