| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2014-12-22 13:45 |
Miyagi | Transmitter model and its characteristic analysis for simplified terahertz ultra-wideband communications by using tunnel devices Kiyoto Asakawa, Hirokazu Yamakura, Yuto Kato, Kaori Imori, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.)  ED2014-99 |
It is expected that applications and situations of near-distance wireless communication will increase more and more toge... [more] | ED2014-99 pp.3-8 |
|
| EST | 2013-05-10 16:15 |
Kanagawa | NTT Science and Core Technology Laboratory Group | A study on evaluations of radiated electromagnetic field using the equivalent theorem for bow-tie antennas operating in teraheltz range Hirokazu Yamakura, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) EST2013-10 |
Many of studies have been performed for experimental demonstrations/developments of a transceiver (TX) and a receiver (R... [more] | EST2013-10 pp.51-56 |
| ED | 2012-12-18 11:15 |
Miyagi | Tohoku University | A modeling and analysis of a resonant tunneling diode integrated with a broadband antenna toward terahertz wireless communications Kiyoto Asakawa, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-105 |
When we discuss deeply about system performance of terahertz wireless communication by employing resonant tunneling diod... [more] | ED2012-105 pp.69-74 |
| ED | 2012-07-27 09:55 |
Fukui | Fukui University | Modeling of nonlinear quantum transport for tunnel diodes and theoretical analysis of its cut-off frequency Shin Yamashita, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-49 |
A resonant tunneling diode (RTD) is one of electron devices which can operate at room temperature in the terahertz range... [more] | ED2012-49 pp.43-48 |
| ED | 2012-07-27 10:20 |
Fukui | Fukui University | Large-signal analysis of injection locking and frequency comb properties in array oscillators consisting of resonant tunneling diodes integrated with wideband antennas Kiyoto Asakawa, Atsushi Tashiro, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-50 |
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] | ED2012-50 pp.49-54 |
| ED | 2011-12-14 16:15 |
Miyagi | Tohoku University | Nonlinear analysis for zero bias detection by using a triple-barrier resonant tunneling diode integrated with a ultra wideband antenna Satoshi Takahagi, Mitsufumi Saito, Michihiko Suhara (Tokyo Metropolitan Univ.) ED2011-106 |
Zero bias detection effective to realize low-power consumption and minimization of detector in terahertz frequency regio... [more] | ED2011-106 pp.35-40 |
| ED | 2011-12-14 16:40 |
Miyagi | Tohoku University | Time domain analysis of ultra high speed modulation by using a Resonant Tunneling Diode integrated with an antenna Yosuke Itagaki, Mitsufumi Saito, Michihiko Suhara (Tokyo Metropolitan Univ.) ED2011-107 |
Resonant tunneling diode (RTD) is expected to perform terahertz applications because of its negative differential condu... [more] |
ED2011-107 pp.41-44 |
| ED | 2011-07-30 11:15 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Analysis of a monolithic integrated rectenna for zero bias detection by using bow-tie antenna and triple-barrier resonant tunneling diode Masahito Nakamura, Satoshi Takahagi, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.) ED2011-51 |
[more] | ED2011-51 pp.67-72 |
| ED | 2011-07-30 11:40 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Identification of a nonlinear equivalent circuit in triple-barrier resonant tunneling diodes by using the particle swarm optimization method Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Met. Univ.) ED2011-52 |
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] | ED2011-52 pp.73-77 |
| ED | 2011-07-30 14:20 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Analysis of spin-polarized current using InSb/AlInSb resonant tunneling diodes Masanari Fujita, Mitsufumi Saito, Michihiko Suhara (Tokyo Met.Univ.) ED2011-56 |
In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTD... [more] | ED2011-56 pp.97-102 |
| SDM, ED (2nd) |
2011-06-29 - 2011-07-01 |
Overseas | Legend Hotel, Daejeon, Korea | Analysis of spin-polarized current using InSb/AlInSb resonant tunneling diodes Masanari Fujita, Mitsufumi Saito, Michihiko Suhara (Tokyo Metropolitan Univ.) |
In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTD... [more] | |
| ED | 2010-09-13 15:20 |
Fukuoka | Kyushu Institute of Technology(Wakamatsu) | Characterization and modeling of triple-barrier resonant tunneling diodes Michihiko Suhara, Kiyoto Asakawa, Yosuke Itagaki, Mitsufumi Saito, Hideaki Shin-ya, Satoshi Takahagi (Tokyo Metro Univ.) ED2010-127 |
Resonant tunneling diodes have been investigated for their wide varieties of physical interests and applications since t... [more] | ED2010-127 pp.25-30 |
| ED, SDM | 2010-06-30 16:25 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes Nobuhiko Tanaka, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2010-62 SDM2010-63 |
A resonant tunneling diode (RTD) is one of high-speed electron devices with negative differential resistance (NDR) chara... [more] | ED2010-62 SDM2010-63 pp.49-53 |
| ED | 2010-06-18 10:25 |
Ishikawa | JAIST | Theoretical analysis of operating conditions to suppress relaxation oscillations in Resonant Tunneling Diode biased at negative differential resistance region Yosuke Itagaki, Kiyoto Asakawa, Hideaki Shin-ya, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro.Univ) ED2010-43 |
A resonant tunneling diode (RTD) is an active device with negative differential resistance operating up to THz region in... [more] | ED2010-43 pp.53-58 |
| ED | 2008-06-14 11:20 |
Ishikawa | Kanazawa University | Heteroepitaxial growth of InSb films via Si(111)-√7×√3-In surface reconstruction Masayuki Mori, Mitsufumi Saito, Kyohei Nagashima, Koji Ueda, Tatsuo Yoshida, Koichi Maezawa (Univ. Toyama) ED2008-37 |
The InSb films grown via In-Sb bi-layer (Si(111)-2×2-InSb surface reconstruction) rotates by 30 ° with respect to Si sub... [more] | ED2008-37 pp.81-84 |
| ED | 2008-06-14 11:45 |
Ishikawa | Kanazawa University | Effects of In and Sb mono-layers to form rotated InSb films on a Si(111) substrate Mitsufumi Saito, Masayuki Mori, Koji Ueda, Koichi Maezawa (Univ. Toyama) ED2008-38 |
A new method for an InSb heteroepitaxial growth on a Si(111) substrate was introduced in our previous work, in which an ... [more] | ED2008-38 pp.85-90 |
| ED | 2007-06-15 15:15 |
Toyama | Toyama Univ. | Formation of high quality InSb film via InSb bi-layer on Si substrate Mitsufumi Saito, Masayuki Mori, Yuji Yamasita, Toyokazu Tambo, Koichi Maezawa (Univ. of Toyama) ED2007-36 |
[more] | ED2007-36 pp.27-32 |
[Return to Top Page]