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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 19 of 19  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2012-10-27
12:15
Niigata   Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE
Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111
Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecu... [more] CPM2012-111
pp.97-100
CPM 2012-08-08
13:50
Yamagata   Fabrication of high-density Ge nanodots/SiC stacked structure by gas source MBE and its PL characteristics
Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato (Nagaoka Univ. Technol.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirsaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2012-35
 [more] CPM2012-35
pp.11-15
CPM 2011-08-10
14:15
Aomori   Photoluminescence characteristics of Ge, SiC nanodots capped by SiC layer
Takashi Otani, Yutaka Anezaki, Sho Asano, Ariyuki Kato (Nagaoka Univ. Technol.), Yuzuru Narita (Yamagata Univ.), Hideki Nakazawa (Hirosaki Univ.), Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) CPM2011-59
Ge and SiC nanodots were formed on Si(001) 3˚ off substrates after the formation of Si c(4x4) structure using monom... [more] CPM2011-59
pp.15-20
CPM 2010-10-29
10:25
Nagano   Optimization of GaN film growth condition using pulse-mode hot-mesh CVD
Kazuki Nagata, Souichi Satomoto (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Techni. College), Maki Suemitsu, Tetsuo Endoh, Takashi Ito (Tohoku Univ. Technol.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2010-102
Hot-mesh CVD with pulse-mode gas supply has been investigated to improve the crystallinity and optical properties of gal... [more] CPM2010-102
pp.55-58
CPM 2009-10-29
14:25
Toyama Toyama Prefectural University Fabrication and evaluation of silicon solar cells by using low-purity polycrystalline silicon wafers
Yuki Sano, Satoru Tsuzuki, Takuzi Umeta, Yuzuru Narita, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) CPM2009-90
(To be available after the conference date) [more] CPM2009-90
pp.5-7
CPM 2009-10-29
14:50
Toyama Toyama Prefectural University Low temperature fabrication of Si TFTs by using organic insulator
Masaki Hashimoto, Takahiko Suzuki, Yuzuru Narita, Fumihiko Hirose (Yamagata Univ.) CPM2009-91
(To be available after the conference date) [more] CPM2009-91
pp.9-11
CPM 2009-10-29
15:15
Toyama Toyama Prefectural University Low temperature fabrication of NiSi on Si by using Plasma including NiCl
Fumihiko Hirose, Kensaku Kanomata, Yuzuru Narita (Yamagata Univ) CPM2009-92
 [more] CPM2009-92
pp.13-15
CPM 2009-08-10
14:40
Aomori Hirosaki Univ. An easy fabircation method of Si MOSFETs for semiconductor education
Fumihiko Hirose, Tatsuro Miyagi, Yuzuru Narita (Yamagata Univ.) CPM2009-33
We have developed an easy fabrication method of Si field effect transistors (FETs) with poly(methyl methacrylate) (PMMA)... [more] CPM2009-33
pp.1-3
CPM 2009-08-10
15:05
Aomori Hirosaki Univ. Evaluation of Hydrogen Desorption Barrier from Si(100) Surface using Temperature-Pprogrammed Desorption and Isothermal Desorption
Yuzuru Narita (Yamagata Univ.), Goro Yasutomi, Chie Unoko, Shoji Inanaga, Akira Namiki (Kyushu Inst. of Tech.) CPM2009-34
We have investigated desorption kinetics of deutrium from a Si(100) surface
using temperature-programmed desorption (T... [more]
CPM2009-34
pp.5-8
CPM 2009-08-10
16:05
Aomori Hirosaki Univ. Characterization of Diamond-Like Carbon Thin Films Prepared by Radio-Frequency Pasma-Ehanced CVD Using Organosilanes
Soushi Miura, Hideki Nakazawa, Keita Nishizaki (Hirosaki Univ.), Maki Suemitsu (RIEC Tohoku Univ.), Kanji Yasui (Nagaoka Univ. of Tech.), Takashi Ito, Tetsuo Endoh (CIR Tohoku Univ.), Yuzuru Narita (Yamagata Univ.) CPM2009-36
To further improve the properties of diamond-like carbon (DLC) films, we have deposited Si-incorporated DLC (Si-DLC) fil... [more] CPM2009-36
pp.13-18
CPM 2009-08-11
11:40
Aomori Hirosaki Univ. Epitaxial growth of gallium nitride on Si by hot-mesh CVD method with intermittent gas supplies.
Takeshi Saitou, Kazuki Nagata (Nagaoka Univ. of Tech.), Maki Suemitsu, Tetsuo Endoh (RIEC Tohoku Univ.), Takashi Ito (CIR Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-45
Hot-mesh CVD with various gas supply modes for the epitaxial growth of gallium nitride (GaN) on Si was investigated for ... [more] CPM2009-45
pp.61-66
ED 2009-04-24
10:15
Miyagi Tohoku Univ. Organic gate FETs and IGBTs with SiGe emitter
Tatsuro Miyagi, Yusuke Ida, Takahiko Suzuki, Yuzuru Narita, Fumihiko Hirose (Yamagata Univ.) ED2009-11
 [more] ED2009-11
pp.45-48
ED 2009-04-24
14:15
Miyagi Tohoku Univ. Enhancement of photovoltaic operation in dye sensitized solar cells by using interface treatments
Hiroki Yoshida, Masaya Shikaku, Koei Kuribayashi, Takahiko Suzuki, Yuzuru Narita, Fumihiko Hirose (Yamagata Univ) ED2009-17
(To be available after the conference date) [more] ED2009-17
pp.73-76
CPM 2008-10-30
13:25
Niigata Niigata Univ. Epitaxial growth of III-V nitride semiconductor films by pulse-mode hot-mesh CVD
Yasuaki Komae, Takeshi Saitou (Nagaoka Univ of Tech), Maki Suemitsu, Takashi Ito, Tetsuo Endoh (CIR of Tohoku Univ), Hideki Nakazawa (FST of Hirosaki Univ), Yuzuru Narita (Kyushu Inst. of Tech.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ of Tech) CPM2008-76
Intermittent gas supplies in hot-mesh CVD for the epitaxial growth of gallium nitride (GaN) were investigated for the im... [more] CPM2008-76
pp.7-12
LQE, CPM, EMD, OPE 2008-08-28
16:00
Miyagi Touhoku Univ. Enhancement of photovoltaic efficiency in dye sensitized solar cells by using TiO2 surface treatments
Masaya Shikaku, Koei Kuribayashi, Hiroki Yoshida, Takahiko Suzuki, Yuzuru Narita, Fumihiko Hirose (Yamagata Univ.) EMD2008-42 CPM2008-57 OPE2008-72 LQE2008-41
(To be available after the conference date) [more] EMD2008-42 CPM2008-57 OPE2008-72 LQE2008-41
pp.57-60
LQE, CPM, EMD, OPE 2008-08-28
16:25
Miyagi Touhoku Univ. High-speed and low-resistance fast recovery diodes using SiGe anode layers
Tatsuro Miyagi, Yusuke Ida, Takahiko Suzuki, Yuzuru Narita, Fumihiko Hirose (Yamagata Univ.) EMD2008-43 CPM2008-58 OPE2008-73 LQE2008-42
(To be available after the conference date) [more] EMD2008-43 CPM2008-58 OPE2008-73 LQE2008-42
pp.61-64
LQE, CPM, EMD, OPE 2008-08-28
16:50
Miyagi Touhoku Univ. Photo sensors using 6T/TiO2 organic-inorganic hetero diode
Yuki Takanashi, Takahiko Suzuki, Yuzuru Narita, Fumihiko Hirose (Yamagata Univ.) EMD2008-44 CPM2008-59 OPE2008-74 LQE2008-43
(To be available after the conference date) [more] EMD2008-44 CPM2008-59 OPE2008-74 LQE2008-43
pp.65-68
CPM 2007-11-17
09:00
Niigata Nagaoka University of Technology Growth of GaN by hot-mesh CVD -- Effect of Ru coated W mesh --
Yusuke Fukada, Kazuki Abe, Yuichiro Kuroki (Nagaoka Univ. Tech.), Maki Suemitsu, Takashi Ito (CIR. Tohoku Univ.), Yuzuru Narita (Kyusyu Inst. Tech.), Tetsuo Endoh (RIEC, Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ. Tech.) CPM2007-115
 [more] CPM2007-115
pp.55-58
SDM 2006-06-22
09:00
Hiroshima Faculty Club, Hiroshima Univ. Comparison between Si(110) and Si(100) Surfaces in their Kinetics of Initial Oxidation -- From Real-time XPS Measurements --
Maki Suemitsu, Atsushi Kato, Hideaki Togashi, Atsushi Konno (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA), Yuzuru Narita (KIT)
By using real-time photoemission spectroscopy, kinetics of initial oxidation of Si(110)-16´2 surface has been investigat... [more] SDM2006-52
pp.61-63
 Results 1 - 19 of 19  /   
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