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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2013-04-11
14:20
Ibaraki Advanced Industrial Science and Technology (AIST) [Invited Lecture] 1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Grained Power Gating Technique -- Achieves 1.0ns/200ps Wake-Up/Power-Off Times --
Tetsuo Endoh, Takashi Ohsawa, Hiroki Koike (Tohoku Univ.), Sadahiko Miura, Hiroaki Honjo, Keiichi Tokutome (NEC), Shoji Ikeda, Takahiro Hanyu, Hideo Ohno (Tohoku Univ.) ICD2013-6
A 1Mb embedded memory was designed and fabricated using a cell consisting of four NFETs and two spin-transfer torque mag... [more] ICD2013-6
pp.27-32
ICD 2013-04-11
16:20
Ibaraki Advanced Industrial Science and Technology (AIST) Highly Reliable Logic Primitive Gates for Spintronics-Based Logic LSI
Yukihide Tsuji, Ryusuke Nebashi, Noboru Sakimura, Ayuka Morioka, Hiroaki Honjo, Keiichi Tokutome, Sadahiko Miura (NEC), Tetsuhiro Suzuki (Renesas Electronics Corp.), Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno (Tohoku Univ.), Tadahiko Sugibayashi (NEC) ICD2013-9
Implementing redundancy within a Spintronis Primitive Gata (SPG) using multi-terminal DWM cells ensures high reliability... [more] ICD2013-9
pp.41-46
OPE 2006-02-17
16:05
Tokyo   Uncooled AlGaInAs-MQW-FP-LD with Ruthenium doped semi-insulating InP buried hetero-structure
Kiyotaka Tsuruoka, Ryuji Kobayashi, Koichi Naniwae, Keiichi Tokutome, , Tomoaki Kato (NEC)
We have developed the first 1.3-μm AlGaInAs-MQW-FP-LD with ruthenium (Ru) doped InP buried heterostructure by narrow-str... [more] OPE2005-153
pp.41-46
LQE 2004-12-03
11:45
Tokyo Kikai-Shinko-Kaikan Bldg. Low-threshold operation of 1.34-μm vertical-cavity surface-emitting lasers with GaInNAs quantum wells
Mitsuki Yamada, Takayoshi Anan, Hiroshi Hatakeyama, Keiichi Tokutome, Naofumi Suzuki, Takahiro Nakamura, Kenichi Nishi (NEC)
A 1.3-μm vertical-cavity surface-emitting laser (VCSEL) is an attractive transmitting device for use in mid-distance opt... [more] LQE2004-122
pp.21-26
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