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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2013-04-11 14:20 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
[Invited Lecture]
1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Grained Power Gating Technique
-- Achieves 1.0ns/200ps Wake-Up/Power-Off Times -- Tetsuo Endoh, Takashi Ohsawa, Hiroki Koike (Tohoku Univ.), Sadahiko Miura, Hiroaki Honjo, Keiichi Tokutome (NEC), Shoji Ikeda, Takahiro Hanyu, Hideo Ohno (Tohoku Univ.) ICD2013-6 |
A 1Mb embedded memory was designed and fabricated using a cell consisting of four NFETs and two spin-transfer torque mag... [more] |
ICD2013-6 pp.27-32 |
ICD |
2013-04-11 16:20 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
Highly Reliable Logic Primitive Gates for Spintronics-Based Logic LSI Yukihide Tsuji, Ryusuke Nebashi, Noboru Sakimura, Ayuka Morioka, Hiroaki Honjo, Keiichi Tokutome, Sadahiko Miura (NEC), Tetsuhiro Suzuki (Renesas Electronics Corp.), Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno (Tohoku Univ.), Tadahiko Sugibayashi (NEC) ICD2013-9 |
Implementing redundancy within a Spintronis Primitive Gata (SPG) using multi-terminal DWM cells ensures high reliability... [more] |
ICD2013-9 pp.41-46 |
OPE |
2006-02-17 16:05 |
Tokyo |
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Uncooled AlGaInAs-MQW-FP-LD with Ruthenium doped semi-insulating InP buried hetero-structure Kiyotaka Tsuruoka, Ryuji Kobayashi, Koichi Naniwae, Keiichi Tokutome, , Tomoaki Kato (NEC) |
We have developed the first 1.3-μm AlGaInAs-MQW-FP-LD with ruthenium (Ru) doped InP buried heterostructure by narrow-str... [more] |
OPE2005-153 pp.41-46 |
LQE |
2004-12-03 11:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Low-threshold operation of 1.34-μm vertical-cavity surface-emitting lasers with GaInNAs quantum wells Mitsuki Yamada, Takayoshi Anan, Hiroshi Hatakeyama, Keiichi Tokutome, Naofumi Suzuki, Takahiro Nakamura, Kenichi Nishi (NEC) |
A 1.3-μm vertical-cavity surface-emitting laser (VCSEL) is an attractive transmitting device for use in mid-distance opt... [more] |
LQE2004-122 pp.21-26 |
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