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Committee Date Time Place Paper Title / Authors Abstract Paper #
OME, SDM 2017-04-20
16:45
Kagoshima Tatsugochou Shougaigakushuu Center A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator
Shun-ichiro Ohmi, Mizuha Hiroki, Hongli Zhang, Yasutaka Maeda (Tokyo Tech) SDM2017-4 OME2017-4
High hole mobility, higher than that of amorphous-Si (a-Si), has been reported for the organic semiconductor field-effec... [more] SDM2017-4 OME2017-4
pp.15-18
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