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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 49 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-27
13:55
Osaka Osaka City University Media Center Growth and optical properties of semi-polar AlGaN/AlN layers grown on m-plane sapphire substrates
Issei Oshima (Saitama Univ./RIKEN), Masafumi Jo, Noritoshi Maeda (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN) ED2015-86 CPM2015-121 LQE2015-118
 [more] ED2015-86 CPM2015-121 LQE2015-118
pp.89-93
ED 2014-12-23
10:30
Miyagi   [Invited Talk] Realization of GaN-based Terahertz Quantum Cascade Lasers using Pure Three-Level Laser Structure
Wataru Terashima, Hideki Hirayama (RIKEN) ED2014-110
III-Nitride semiconductors having huge longitudinal optical phonon energies are promising as materials to solve a proble... [more] ED2014-110
pp.69-74
ED 2014-12-23
11:10
Miyagi   Modulation barrier AlGaAs/GaAs quantum cascade laser operating at 3.7 THz
Tsung-Tse Lin, Hideki Hirayama (RIKEN) ED2014-111
Recently one more design freedom of change the barriers height in THz QCLs is expected to improve device performance and... [more] ED2014-111
pp.75-78
LQE, ED, CPM 2014-11-27
14:05
Osaka   The micro machining process technology of nano imprint and dry etching to improve the efficiency of nitride LED
Yukio Kashima, Eriko Matsuura (Marubun), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa (Toshiba Machine), Ryuichiro Kamimura, Yamato Osada (ULVAC), Sachie Fujikawa, Hideki Hirayama (RIKEN) ED2014-79 CPM2014-136 LQE2014-107
We fabricated the photonic crystal in nitride LED and improved the light extraction efficiency. We also introduce the mi... [more] ED2014-79 CPM2014-136 LQE2014-107
pp.27-32
LQE, ED, CPM 2014-11-27
14:55
Osaka   Fabrication of high-quality AlN buffer layer for deep-UV LEDs grown on wet chemical etched patterned sapphire substrate
Yuya Kanazawa, Shiro Toyoda, Issei Ohshima (Saitama Univ./RIKEN), Norihiko Kamata (Saitama Univ.), Yukio Kashima (Marubun), Eriko Matsuura (MARUBUN), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Takashi Ohkawa, Ryuichiro Kamimura, Yamato Osada (ULVAC), Hideki Hirayama (RIKEN) ED2014-81 CPM2014-138 LQE2014-109
 [more] ED2014-81 CPM2014-138 LQE2014-109
pp.39-44
LQE, ED, CPM 2014-11-28
09:30
Osaka   Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure
Wataru Terashima, Hideki Hirayama (RIKEN) ED2014-85 CPM2014-142 LQE2014-113
III-Nitride semiconductors having huge longitudinal optical phonon energies are promising as materials to solve a proble... [more] ED2014-85 CPM2014-142 LQE2014-113
pp.59-62
LQE, ED, CPM 2014-11-28
09:55
Osaka   MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz
Shiro Toyoda (RIKEN/Saitama Univ.), Wataru Terashima (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN/Saitama Univ.) ED2014-84 CPM2014-141 LQE2014-112
Terahertz quantum cascade lasers (THz-QCLs) are attracting attention for use as a lot of applications, because they are ... [more] ED2014-84 CPM2014-141 LQE2014-112
pp.55-58
LQE, ED, CPM 2014-11-28
11:25
Osaka   Operation of deep UV LED using superlattice p-AlGaN hole-spreading contact layer
Noritoshi Maeda, Masafumi Jo, Hideki Hirayama (RIKEN) ED2014-88 CPM2014-145 LQE2014-116
P-GaN free structure and highly-reflective p-type electrode are required for realizing high light-extraction efficiency ... [more] ED2014-88 CPM2014-145 LQE2014-116
pp.73-76
LQE, ED, CPM 2014-11-28
11:50
Osaka   Deep UV light-emitting diodes containing a p-AlGaN contacting layer with high Al content
Masafumi Jo, Noritoshi Maeda, Hideki Hirayama (RIKEN) ED2014-89 CPM2014-146 LQE2014-117
AlGaN light-emitting diodes (LEDs) have been extensively studied for highly efficient light sources in deep ultraviolet ... [more] ED2014-89 CPM2014-146 LQE2014-117
pp.77-80
ED 2013-12-16
17:25
Miyagi Research Institute of Electrical Communication Tohoku University 1.89 THz Lasing at 160 K from THz-QCL with Indirect Injection Scheme
Miho Sasaki (RIKEN/Saitama Univ.), Tsung-Tse Lin (RIKEN), Hideki Hirayama (RIKEN/Saitama Univ.) ED2013-99
Terahertz quantum cascade laser (THz-QCL) is expected as a compact terahertz laser light source which realizes high outp... [more] ED2013-99
pp.53-56
CPM, LQE, ED 2013-11-29
13:30
Osaka   Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes
Takuya Mino (Riken/Panasonic), Hideki Hirayama (Riken), Norimichi Noguchi, Takayoshi Takano, Kenji Tsubaki (Riken/Panasonic) ED2013-82 CPM2013-141 LQE2013-117
High-quality AlN templates were successfully fabricated on sapphire substrates by using a 2-inchx3 metallorganic vapor p... [more] ED2013-82 CPM2013-141 LQE2013-117
pp.83-86
CPM, LQE, ED 2013-11-29
13:55
Osaka   Realization of high-efficiency deep-UV LED by using transparent p-AlGaN contact layer
Noritoshi Maeda, Hideki Hirayama (RIKEN) ED2013-83 CPM2013-142 LQE2013-118
The improvement of light-extraction efficiency (LEE) is one of the most important issues for AlGaN-based deep-ultraviole... [more] ED2013-83 CPM2013-142 LQE2013-118
pp.87-90
CPM, LQE, ED 2013-11-29
14:45
Osaka   Growth of Connected Pillar AlN Buffer for AlGaN deep-UV LEDs
Shiro Toyoda (Saitama Univ./RIKEN), Hideki Hirayama (RIKEN), Norihiko Kamata (Saitama Univ.) ED2013-85 CPM2013-144 LQE2013-120
A connected-pillar AlN buffer structure fabricated on sapphire substrate is considered to be quite effective for increas... [more] ED2013-85 CPM2013-144 LQE2013-120
pp.95-100
OPE, LQE, CPM, EMD, R 2013-08-29
16:55
Hokkaido sun-refre Hakodate 1.9 THz Selective Injection Design Quantum Cascade Laser Operating at Extreme Higher Temperature above kBT Line
Miho Sasaki, Tsung-Tse Lin, Hideki Hirayama (RIKEN) R2013-43 EMD2013-49 CPM2013-68 OPE2013-72 LQE2013-42
Terahertz quantum cascade laser (THz-QCL) is a promising compact THz light source realizing the cw operation, high outpu... [more] R2013-43 EMD2013-49 CPM2013-68 OPE2013-72 LQE2013-42
pp.77-80
ED 2012-12-18
10:05
Miyagi Tohoku University Operation temperature performance improvement by utilizing high Al composition AlGaAs in THz QCLs
Tsung-Tse Lin, Hideki Hirayama (RIKEN) ED2012-103
Terahertz quantum cascade lasers (THz QCLs) are unipolar intersubband transition semiconductor THz source with narrow li... [more] ED2012-103
pp.57-61
ED, LQE, CPM 2012-11-30
13:40
Osaka Osaka City University Approaches for improving efficiency of AlGaN-based deep-UV LEDs
Yuji Tomita (Saitama Univ.), Hideki Hirayama, Sachie Fujikawa (RIKEN), Katsuya Mizusawa, Siro Toyoda, Norihiko Kamata (Saitama Univ.) ED2012-84 CPM2012-141 LQE2012-112
A connected-pillar AlN buffer structure fabricated on sapphire substrate is considered to be quite effective for increas... [more] ED2012-84 CPM2012-141 LQE2012-112
pp.87-92
ED 2011-12-15
13:00
Miyagi Tohoku University [Invited Talk] Recent progress and future prospects of terahertz quantum cascade lasers
Hideki Hirayama, Wataru Terashima, Tsung-Tse Lin (RIKEN) ED2011-113
Terahertz-quantum cascade lasers (THz-QCLs) are small-size, continuous-wave (cw) and long-lifetime THz light sources wit... [more] ED2011-113
pp.75-78
LQE, ED, CPM 2011-11-18
12:45
Kyoto Katsura Hall,Kyoto Univ. Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inchx3 MOVPE system
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki (RIKEN/PEW) ED2011-93 CPM2011-142 LQE2011-116
We have developed highly-uniform 260-nm-band AlGaN-based DUV LEDs fabricated on AlN templates on (0001) sapphire using a... [more] ED2011-93 CPM2011-142 LQE2011-116
pp.103-106
LQE, ED, CPM 2011-11-18
13:10
Kyoto Katsura Hall,Kyoto Univ. Investigation for chracteristics of AlN growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN Deep-UV LEDs
Noritoshi Maeda, Hideki Hirayama, Sachie Fujikawa (RIKEN) ED2011-94 CPM2011-143 LQE2011-117
(To be available after the conference date) [more] ED2011-94 CPM2011-143 LQE2011-117
pp.107-112
LQE, ED, CPM 2011-11-18
13:35
Kyoto Katsura Hall,Kyoto Univ. Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.) ED2011-95 CPM2011-144 LQE2011-118
We demonstrated 256-278 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) on Si substrates by using epi... [more] ED2011-95 CPM2011-144 LQE2011-118
pp.113-116
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