Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, LQE, CPM |
2015-11-27 13:55 |
Osaka |
Osaka City University Media Center |
Growth and optical properties of semi-polar AlGaN/AlN layers grown on m-plane sapphire substrates Issei Oshima (Saitama Univ./RIKEN), Masafumi Jo, Noritoshi Maeda (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN) ED2015-86 CPM2015-121 LQE2015-118 |
[more] |
ED2015-86 CPM2015-121 LQE2015-118 pp.89-93 |
ED |
2014-12-23 10:30 |
Miyagi |
|
[Invited Talk]
Realization of GaN-based Terahertz Quantum Cascade Lasers using Pure Three-Level Laser Structure Wataru Terashima, Hideki Hirayama (RIKEN) ED2014-110 |
III-Nitride semiconductors having huge longitudinal optical phonon energies are promising as materials to solve a proble... [more] |
ED2014-110 pp.69-74 |
ED |
2014-12-23 11:10 |
Miyagi |
|
Modulation barrier AlGaAs/GaAs quantum cascade laser operating at 3.7 THz Tsung-Tse Lin, Hideki Hirayama (RIKEN) ED2014-111 |
Recently one more design freedom of change the barriers height in THz QCLs is expected to improve device performance and... [more] |
ED2014-111 pp.75-78 |
LQE, ED, CPM |
2014-11-27 14:05 |
Osaka |
|
The micro machining process technology of nano imprint and dry etching to improve the efficiency of nitride LED Yukio Kashima, Eriko Matsuura (Marubun), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa (Toshiba Machine), Ryuichiro Kamimura, Yamato Osada (ULVAC), Sachie Fujikawa, Hideki Hirayama (RIKEN) ED2014-79 CPM2014-136 LQE2014-107 |
We fabricated the photonic crystal in nitride LED and improved the light extraction efficiency. We also introduce the mi... [more] |
ED2014-79 CPM2014-136 LQE2014-107 pp.27-32 |
LQE, ED, CPM |
2014-11-27 14:55 |
Osaka |
|
Fabrication of high-quality AlN buffer layer for deep-UV LEDs grown on wet chemical etched patterned sapphire substrate Yuya Kanazawa, Shiro Toyoda, Issei Ohshima (Saitama Univ./RIKEN), Norihiko Kamata (Saitama Univ.), Yukio Kashima (Marubun), Eriko Matsuura (MARUBUN), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Takashi Ohkawa, Ryuichiro Kamimura, Yamato Osada (ULVAC), Hideki Hirayama (RIKEN) ED2014-81 CPM2014-138 LQE2014-109 |
[more] |
ED2014-81 CPM2014-138 LQE2014-109 pp.39-44 |
LQE, ED, CPM |
2014-11-28 09:30 |
Osaka |
|
Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure Wataru Terashima, Hideki Hirayama (RIKEN) ED2014-85 CPM2014-142 LQE2014-113 |
III-Nitride semiconductors having huge longitudinal optical phonon energies are promising as materials to solve a proble... [more] |
ED2014-85 CPM2014-142 LQE2014-113 pp.59-62 |
LQE, ED, CPM |
2014-11-28 09:55 |
Osaka |
|
MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz Shiro Toyoda (RIKEN/Saitama Univ.), Wataru Terashima (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN/Saitama Univ.) ED2014-84 CPM2014-141 LQE2014-112 |
Terahertz quantum cascade lasers (THz-QCLs) are attracting attention for use as a lot of applications, because they are ... [more] |
ED2014-84 CPM2014-141 LQE2014-112 pp.55-58 |
LQE, ED, CPM |
2014-11-28 11:25 |
Osaka |
|
Operation of deep UV LED using superlattice p-AlGaN hole-spreading contact layer Noritoshi Maeda, Masafumi Jo, Hideki Hirayama (RIKEN) ED2014-88 CPM2014-145 LQE2014-116 |
P-GaN free structure and highly-reflective p-type electrode are required for realizing high light-extraction efficiency ... [more] |
ED2014-88 CPM2014-145 LQE2014-116 pp.73-76 |
LQE, ED, CPM |
2014-11-28 11:50 |
Osaka |
|
Deep UV light-emitting diodes containing a p-AlGaN contacting layer with high Al content Masafumi Jo, Noritoshi Maeda, Hideki Hirayama (RIKEN) ED2014-89 CPM2014-146 LQE2014-117 |
AlGaN light-emitting diodes (LEDs) have been extensively studied for highly efficient light sources in deep ultraviolet ... [more] |
ED2014-89 CPM2014-146 LQE2014-117 pp.77-80 |
ED |
2013-12-16 17:25 |
Miyagi |
Research Institute of Electrical Communication Tohoku University |
1.89 THz Lasing at 160 K from THz-QCL with Indirect Injection Scheme Miho Sasaki (RIKEN/Saitama Univ.), Tsung-Tse Lin (RIKEN), Hideki Hirayama (RIKEN/Saitama Univ.) ED2013-99 |
Terahertz quantum cascade laser (THz-QCL) is expected as a compact terahertz laser light source which realizes high outp... [more] |
ED2013-99 pp.53-56 |
CPM, LQE, ED |
2013-11-29 13:30 |
Osaka |
|
Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes Takuya Mino (Riken/Panasonic), Hideki Hirayama (Riken), Norimichi Noguchi, Takayoshi Takano, Kenji Tsubaki (Riken/Panasonic) ED2013-82 CPM2013-141 LQE2013-117 |
High-quality AlN templates were successfully fabricated on sapphire substrates by using a 2-inchx3 metallorganic vapor p... [more] |
ED2013-82 CPM2013-141 LQE2013-117 pp.83-86 |
CPM, LQE, ED |
2013-11-29 13:55 |
Osaka |
|
Realization of high-efficiency deep-UV LED by using transparent p-AlGaN contact layer Noritoshi Maeda, Hideki Hirayama (RIKEN) ED2013-83 CPM2013-142 LQE2013-118 |
The improvement of light-extraction efficiency (LEE) is one of the most important issues for AlGaN-based deep-ultraviole... [more] |
ED2013-83 CPM2013-142 LQE2013-118 pp.87-90 |
CPM, LQE, ED |
2013-11-29 14:45 |
Osaka |
|
Growth of Connected Pillar AlN Buffer for AlGaN deep-UV LEDs Shiro Toyoda (Saitama Univ./RIKEN), Hideki Hirayama (RIKEN), Norihiko Kamata (Saitama Univ.) ED2013-85 CPM2013-144 LQE2013-120 |
A connected-pillar AlN buffer structure fabricated on sapphire substrate is considered to be quite effective for increas... [more] |
ED2013-85 CPM2013-144 LQE2013-120 pp.95-100 |
OPE, LQE, CPM, EMD, R |
2013-08-29 16:55 |
Hokkaido |
sun-refre Hakodate |
1.9 THz Selective Injection Design Quantum Cascade Laser Operating at Extreme Higher Temperature above kBT Line Miho Sasaki, Tsung-Tse Lin, Hideki Hirayama (RIKEN) R2013-43 EMD2013-49 CPM2013-68 OPE2013-72 LQE2013-42 |
Terahertz quantum cascade laser (THz-QCL) is a promising compact THz light source realizing the cw operation, high outpu... [more] |
R2013-43 EMD2013-49 CPM2013-68 OPE2013-72 LQE2013-42 pp.77-80 |
ED |
2012-12-18 10:05 |
Miyagi |
Tohoku University |
Operation temperature performance improvement by utilizing high Al composition AlGaAs in THz QCLs Tsung-Tse Lin, Hideki Hirayama (RIKEN) ED2012-103 |
Terahertz quantum cascade lasers (THz QCLs) are unipolar intersubband transition semiconductor THz source with narrow li... [more] |
ED2012-103 pp.57-61 |
ED, LQE, CPM |
2012-11-30 13:40 |
Osaka |
Osaka City University |
Approaches for improving efficiency of AlGaN-based deep-UV LEDs Yuji Tomita (Saitama Univ.), Hideki Hirayama, Sachie Fujikawa (RIKEN), Katsuya Mizusawa, Siro Toyoda, Norihiko Kamata (Saitama Univ.) ED2012-84 CPM2012-141 LQE2012-112 |
A connected-pillar AlN buffer structure fabricated on sapphire substrate is considered to be quite effective for increas... [more] |
ED2012-84 CPM2012-141 LQE2012-112 pp.87-92 |
ED |
2011-12-15 13:00 |
Miyagi |
Tohoku University |
[Invited Talk]
Recent progress and future prospects of terahertz quantum cascade lasers Hideki Hirayama, Wataru Terashima, Tsung-Tse Lin (RIKEN) ED2011-113 |
Terahertz-quantum cascade lasers (THz-QCLs) are small-size, continuous-wave (cw) and long-lifetime THz light sources wit... [more] |
ED2011-113 pp.75-78 |
LQE, ED, CPM |
2011-11-18 12:45 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inchx3 MOVPE system Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki (RIKEN/PEW) ED2011-93 CPM2011-142 LQE2011-116 |
We have developed highly-uniform 260-nm-band AlGaN-based DUV LEDs fabricated on AlN templates on (0001) sapphire using a... [more] |
ED2011-93 CPM2011-142 LQE2011-116 pp.103-106 |
LQE, ED, CPM |
2011-11-18 13:10 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Investigation for chracteristics of AlN growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN Deep-UV LEDs Noritoshi Maeda, Hideki Hirayama, Sachie Fujikawa (RIKEN) ED2011-94 CPM2011-143 LQE2011-117 |
(To be available after the conference date) [more] |
ED2011-94 CPM2011-143 LQE2011-117 pp.107-112 |
LQE, ED, CPM |
2011-11-18 13:35 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.) ED2011-95 CPM2011-144 LQE2011-118 |
We demonstrated 256-278 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) on Si substrates by using epi... [more] |
ED2011-95 CPM2011-144 LQE2011-118 pp.113-116 |