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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2020-10-22
15:50		 Online Online Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis
Ryo Akimoto, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2020-21		 In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shap... [more] SDM2020-21
pp.34-39
SDM 2018-10-18
14:00		 Miyagi Niche, Tohoku Univ. Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain
Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2018-62		 In this paper, a statistical analysis of electric characteristics variabilities such as threshold voltage variability an... [more] SDM2018-62
pp.51-56
SDM 2017-10-26
14:00		 Miyagi Niche, Tohoku Univ. Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit
Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa (Tohoku Univ.) SDM2017-60		 Behaviors of random telegraph noise (RTN) occurs at CMOS image sensors’ in-pixel source follower transistors (SF) toward... [more] SDM2017-60
pp.57-62
SDM 2016-10-27
10:50		 Miyagi Niche, Tohoku Univ. Behavior of Random Telegraph Noise toward Bias Voltage Changing
Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2016-75		 As the progression of MOSFETs scaling down continues, the impacts of RTN (Random Telegraph Noise) on the MOSFETs have be... [more] SDM2016-75
pp.35-38
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