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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2010-07-02
10:10		 Tokyo Tokyo Inst. of Tech. Ookayama Campus [Invited Talk] InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD
Makoto Miyoshi, Shigeaki Sumiya, Mikiya Ichimura, Tomohiko Sugiyama, Sota Maehara, Mitsuhiro Tanaka (NGK), Takashi Egawa (Nagoya Inst. of Tech.) ED2010-105 SDM2010-106		 Lattice-matched In0.18Al0.82N/GaN HEMT structures were grown on 4-inch-diameter silicon substrates by MOCVD. The sample... [more] ED2010-105 SDM2010-106
pp.241-244
ED, LQE, CPM 2009-11-20
10:20		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Characterization of quaternary InAlGaN/GaN HEMT epi-structures fabricated on 4inch diameter Si substrates
Mikiya Ichimura, Makoto Miyoshi, Mitsuhiro Tanaka (NGK Insulators, Ltd.), Takashi Egawa (Nagoya Inst. of Tech.) ED2009-149 CPM2009-123 LQE2009-128		 MOCVD growth and material characterization of quaternary InAlGaN/GaN HEMT structures, which allow for various combinatio... [more] ED2009-149 CPM2009-123 LQE2009-128
pp.99-103
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